Bipolar Characteristics of an Organic Light-Emitting Filed Effect Transistor Using a TPTPT and NTCDA Co-Deposited Layer
We fabricated an organic light-emitting field effect transistors (OLEFET) using a co-deposited layer of TPTPT and NTCDA which has p-type and n-type semiconducting behaviors, respectively. The organic layer was formed on a comb type electrode (source-drain electrodes) with a channel length of 25μm on...
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Veröffentlicht in: | Denki Gakkai ronbunshi. C, Erekutoronikusu, joho kogaku, shisutemu Information and Systems, 2006, Vol.126(9), pp.1107-1111 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We fabricated an organic light-emitting field effect transistors (OLEFET) using a co-deposited layer of TPTPT and NTCDA which has p-type and n-type semiconducting behaviors, respectively. The organic layer was formed on a comb type electrode (source-drain electrodes) with a channel length of 25μm on a p-Si/SiO2 substrate. Bipolar and EL characteristics were investigated by changing co-deposition ratio of TPTPT and NTCDA. In the optimum deposition ratio, we observed typical ambipolar characteristics, demonstrating saturation current characteristics at low Vd (source-drain voltage), followed by divergent current characteristics at high Vd. |
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ISSN: | 0385-4221 1348-8155 |
DOI: | 10.1541/ieejeiss.126.1107 |