Fast-Recovery Pin Diodes with SiGe Anode Layers
Fast-recovery and low on-state-forward-voltage drop (Vf) in pin-diodes can be simultaneously obtained with a relaxed SiGe crystal anode layer. We have successfully fabricated 280V-class SiGe pin diodes with a recovery time of 160ns and Vf of 0.86V at a forward current density of 100A/cm2. A device s...
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| Veröffentlicht in: | Denki Gakkai ronbunshi. C, Erekutoronikusu, joho kogaku, shisutemu Erekutoronikusu, joho kogaku, shisutemu, 2006, Vol.126 (11), p.1340-1343 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | Fast-recovery and low on-state-forward-voltage drop (Vf) in pin-diodes can be simultaneously obtained with a relaxed SiGe crystal anode layer. We have successfully fabricated 280V-class SiGe pin diodes with a recovery time of 160ns and Vf of 0.86V at a forward current density of 100A/cm2. A device simulation predicts a possibility of Vf=0.7V@100A /cm2 and a recovery time of 20ns by controlling carrier lifetimes at p and i layers independently with SiGe. |
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| ISSN: | 0385-4221 1348-8155 |
| DOI: | 10.1541/ieejeiss.126.1340 |