Photovoltaic application of O-doped Wittichenite-Cu3BiS3: from microscopic properties to maximum efficiencies
The electronic properties and the low environmental impact of Cu3BiS3 make this compound a promising material for low-cost thin film solar cell technology. From the first principles, the electronic properties of the isoelectronic substitution of S by O in Cu3BiS3 have been obtained using two differe...
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Veröffentlicht in: | Progress in photovoltaics 2013-08, Vol.21 (5), p.894-899 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The electronic properties and the low environmental impact of Cu3BiS3 make this compound a promising material for low-cost thin film solar cell technology. From the first principles, the electronic properties of the isoelectronic substitution of S by O in Cu3BiS3 have been obtained using two different exchange-correlation potentials. This compound has an acceptor level below the conduction band, which modifies the opto-electronic properties with respect to the host semiconductor. In order to analyze a possible efficiency increment with respect to the host semiconductor, we have calculated the maximum efficiency of this photovoltaic absorber material. Copyright © 2012 John Wiley & Sons, Ltd [PUBLICATION ABSTRACT]. |
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ISSN: | 1062-7995 1099-159X |
DOI: | 10.1002/pip.2173 |