Photovoltaic application of O-doped Wittichenite-Cu3BiS3: from microscopic properties to maximum efficiencies

The electronic properties and the low environmental impact of Cu3BiS3 make this compound a promising material for low-cost thin film solar cell technology. From the first principles, the electronic properties of the isoelectronic substitution of S by O in Cu3BiS3 have been obtained using two differe...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Progress in photovoltaics 2013-08, Vol.21 (5), p.894-899
1. Verfasser: TABLERO, C
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The electronic properties and the low environmental impact of Cu3BiS3 make this compound a promising material for low-cost thin film solar cell technology. From the first principles, the electronic properties of the isoelectronic substitution of S by O in Cu3BiS3 have been obtained using two different exchange-correlation potentials. This compound has an acceptor level below the conduction band, which modifies the opto-electronic properties with respect to the host semiconductor. In order to analyze a possible efficiency increment with respect to the host semiconductor, we have calculated the maximum efficiency of this photovoltaic absorber material. Copyright © 2012 John Wiley & Sons, Ltd [PUBLICATION ABSTRACT].
ISSN:1062-7995
1099-159X
DOI:10.1002/pip.2173