[Formula Omitted] Model for Frequency Dependence of Split [Formula Omitted] Measurements on Bare SOI Wafers

The feasibility of split [Formula Omitted] measurements for direct evaluation of carrier mobility in as-fabricated silicon-on-insulator wafers has been demonstrated. Here, we complete this letter by modeling the frequency dependence of capacitance curves. The peculiarity of the pseudo-MOSFET ([Formula Omitted]-MOSFET) configuration with respect to standard MOSFET comes from the possible distribution of mobile carriers beyond the source and drain contacts. This implies a variation in charge spreading and capacitance with frequency that we address with an [Formula Omitted] low-pass filter model. Experimental [Formula Omitted] measurements with one and two probes were used for validation of the proposed model.