All-Semiconductor Photonic Crystal Surface-Emitting Lasers Based on Epitaxial Regrowth

The realization of all-semiconductor epitaxially regrown photonic crystal (PC) surface-emitting lasers is reported. PC coupling strengths, band structure, optimization of epitaxial regrowth, and operating characteristics are discussed. Room temperature operation allows agreement between theoretical...

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Veröffentlicht in:	IEEE journal of selected topics in quantum electronics 2013-07, Vol.19 (4), p.4900407-4900407
Hauptverfasser:	Taylor, R. J. E., Williams, D. M., Childs, D. T. D., Stevens, B. J., Shepherd, L. R., Khamas, S., Groom, K. M., Hogg, R. A., Ikeda, N., Sugimoto, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Couplings Dielectrics Epitaxial growth Gallium arsenide Lasers Nanophotonics Photonic crystals semiconductor growth semiconductor lasers Shape
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