All-Semiconductor Photonic Crystal Surface-Emitting Lasers Based on Epitaxial Regrowth

The realization of all-semiconductor epitaxially regrown photonic crystal (PC) surface-emitting lasers is reported. PC coupling strengths, band structure, optimization of epitaxial regrowth, and operating characteristics are discussed. Room temperature operation allows agreement between theoretical...

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Veröffentlicht in:	IEEE journal of selected topics in quantum electronics 2013-07, Vol.19 (4), p.4900407-4900407
Hauptverfasser:	Taylor, R. J. E., Williams, D. M., Childs, D. T. D., Stevens, B. J., Shepherd, L. R., Khamas, S., Groom, K. M., Hogg, R. A., Ikeda, N., Sugimoto, Y.
Format:	Artikel
Sprache:	eng
Schlagworte:	Couplings Dielectrics Epitaxial growth Gallium arsenide Lasers Nanophotonics Photonic crystals semiconductor growth semiconductor lasers Shape
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Beschreibung
Zusammenfassung:	The realization of all-semiconductor epitaxially regrown photonic crystal (PC) surface-emitting lasers is reported. PC coupling strengths, band structure, optimization of epitaxial regrowth, and operating characteristics are discussed. Room temperature operation allows agreement between theoretical and experimental band structure to be confirmed.
ISSN:	1077-260X 1558-4542
DOI:	10.1109/JSTQE.2013.2249293