Improved control of the phosphorous surface concentration during in-line diffusion of c-Si solar cells by APCVD

Emitter formation for industrial crystalline silicon (c‐Si) solar cells is demonstrated by the deposition of phosphorous‐doped silicate glasses (PSG) on p‐type monocrystalline silicon wafers via in‐line atmospheric pressure chemical vapor deposition (APCVD) and subsequent thermal diffusion. Processed wafers with and without the PSG layers have been analysed by SIMS measurements to investigate the depth profiles of the resultant phosphorous emitters. Subsequently, complete solar cells were fabricated using the phosphorous emitters formed by doped silicate glasses to determine the impact of this high‐throughput doping method on cell performance. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) Using phosphosilicate glass thin films deposited by APCVD, the authors report on improved control of phosphorus surface concentration for c‐Si solar cells formed by in‐line diffusion. They demonstrate doping from APCVD films in a high‐throughput, dynamic deposition system, offering an alternative to in‐line emitter formation via H3PO4 doping, a technology that suffers from high phosphorus surface concentration.