Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage
Enhancement mode operation of AlGaN/GaN devices with breakdown voltage over 700 V is achieved by threshold shifting in a FLASH metal oxide semiconductor heterojunction field effect transistor. Charge stored during a programming step in either a charge trap or metal floating gate charge storage layer...
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| Veröffentlicht in: | Physica status solidi. C 2012-03, Vol.9 (3-4), p.864-867 |
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| container_title | Physica status solidi. C |
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| creator | Kirkpatrick, Casey Lee, Bongmook Choi, YoungHwan Huang, Alex Misra, Veena |
| description | Enhancement mode operation of AlGaN/GaN devices with breakdown voltage over 700 V is achieved by threshold shifting in a FLASH metal oxide semiconductor heterojunction field effect transistor. Charge stored during a programming step in either a charge trap or metal floating gate charge storage layer is responsible for this shift. Threshold stability for charge trap and floating gate memories is compared with charge trap devices losing |
| doi_str_mv | 10.1002/pssc.201100421 |
| format | Article |
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Charge stored during a programming step in either a charge trap or metal floating gate charge storage layer is responsible for this shift. Threshold stability for charge trap and floating gate memories is compared with charge trap devices losing <10% of initial threshold voltage shift after 104 seconds. Charge trap and floating gate devices maintain enhancement mode operation after 4 × 104 s. Threshold voltage as a function of drain bias for each storage method is compared. The most stable threshold voltage is observed when utilizing charge trap storage due to the discrete nature of the traps. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><identifier>ISSN: 1862-6351</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.201100421</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>ALD ; enhancement mode ; GaN ; MOS-HFET</subject><ispartof>Physica status solidi. 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| language | eng |
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| source | Access via Wiley Online Library |
| subjects | ALD enhancement mode GaN MOS-HFET |
| title | Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage |
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