Threshold voltage stability comparison in AlGaN/GaN FLASH MOS-HFETs utilizing charge trap or floating gate charge storage

Enhancement mode operation of AlGaN/GaN devices with breakdown voltage over 700 V is achieved by threshold shifting in a FLASH metal oxide semiconductor heterojunction field effect transistor. Charge stored during a programming step in either a charge trap or metal floating gate charge storage layer is responsible for this shift. Threshold stability for charge trap and floating gate memories is compared with charge trap devices losing