Toward Discrete Axial pâ[euro]"n Junction Nanowire Light-Emitting Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy

Issue Title: 2012 Electronic Materials Conference. Guest Editors: Joshua Caldwell, Rachel Goldman, Jamie Phillips, Oana Jurchescu, Shadi Shahedipour-Sandvik, Alberto Salleo, Grace Xing, and Jian Xu In this paper we investigate axial pâ[euro]"n junction GaN nanowires grown by plasma-assisted mol...

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Veröffentlicht in:Journal of electronic materials 2013-05, Vol.42 (5), p.868
Hauptverfasser: Brubaker, Matt D, Blanchard, Paul T, Schlager, John B, Sanders, Aric W, Herrero, Andrew M, Roshko, Alexana, Duff, Shannon M, Harvey, Todd E, Bright, Victor M, Sanford, Norman A, Bertness, Kris A
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Sprache:eng
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Zusammenfassung:Issue Title: 2012 Electronic Materials Conference. Guest Editors: Joshua Caldwell, Rachel Goldman, Jamie Phillips, Oana Jurchescu, Shadi Shahedipour-Sandvik, Alberto Salleo, Grace Xing, and Jian Xu In this paper we investigate axial pâ[euro]"n junction GaN nanowires grown by plasma-assisted molecular beam epitaxy (MBE), with particular attention to the effect of Mg doping on the device characteristics of individual nanowire light-emitting diodes (LEDs). We observe that a significant fraction of single-nanowire LEDs produce measurable band-gap electroluminescence when a thin AlGaN electron blocking layer (EBL) is incorporated into the device structure near the junction. Similar devices with no EBL typically yield below-detection-limit electroluminescence, despite diode-like Iâ[euro]"V characteristics and optically measured internal quantum efficiencies (IQEs) of â ¼1%. Iâ[euro]"V measurements of the p-regions in pâ[euro]"n junction nanowires, as well as nanowires doped with Mg only, indicate low p-type conductivity and asymmetric Schottky-like p-contacts. These observations suggest that imbalanced carrier injection from the junction and p-contact can produce significant nonradiative losses.[PUBLICATION ABSTRACT]
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-013-2498-y