Flexible InGaZnO thin film transistors using stacked Y2O3/TiO2/Y2O3 gate dielectrics grown at room temperature

In this Letter, we report a low operation voltage and high mobility flexible InGaZnO thin‐film transistor (TFT) using room‐temperature processed Y2O3/TiO2/Y2O3 gate dielectric. The flexible IGZO TFT showed a low threshold voltage of 0.75 V, a small sub‐threshold swing of 137 mV/decade, a good field effect mobility of 32.7 cm2/V s, and a large Ion/Ioff ratio of 1.7 × 106. The low operation voltage, small sub‐threshold swing and high mobility could be ascribed to the combination of high‐κ TiO2 and large band gap Y2O3, which provide the potential to meet the requirements of low‐temperature and low‐power portable electronics. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) Indium gallium zinc oxide (IGZO) thin film transistors (TFTs) have been studied extensively owing to the advantages of a low‐temperature growth process and high drive current. The authors demonstrate a high performance flexible IGZO TFT with a low operation voltage of