Cathodoluminescence of ZnSe-based II-VI green laser heterostructures

Cathodoluminescence of ZnSe-based II-VI green laser heterostructures

The cathodoluminescence technique to study the ZnSe‐based laser heterostructures is described. The heterostructures were grown by molecular beam epitaxy on GaAs (001) substrates and consist of bottom and top ZnMgSSe cladding layers and ZnCdSe/ZnSe quantum well or CdSe/ZnSe quantum dots sheets placed...

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Veröffentlicht in:Physica status solidi. C 2012-08, Vol.9 (8-9), p.1840-1843
Hauptverfasser: Shakhmin, Alexey A., Sedova, Irina V., Sorokin, Sergey V., Zamoryanskaya, Maria V.
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carrier transport
cathodoluminescence
II-VI heterostructures
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container_issue 8-9
container_start_page 1840
container_title Physica status solidi. C
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creator Shakhmin, Alexey A.
Sedova, Irina V.
Sorokin, Sergey V.
Zamoryanskaya, Maria V.
description The cathodoluminescence technique to study the ZnSe‐based laser heterostructures is described. The heterostructures were grown by molecular beam epitaxy on GaAs (001) substrates and consist of bottom and top ZnMgSSe cladding layers and ZnCdSe/ZnSe quantum well or CdSe/ZnSe quantum dots sheets placed inside Zn(Mg)SSe/ZnSe graded index waveguide. The transport of charge carriers generated by electron beam in heterostructure was investigated using depth resolved cathodoluminescence. For that the dependence of cathodoluminescence intensity of active region on electron beam energy has been simulated using Monte‐Carlo calculation of carrier distribution on depth. It made possible the nondestructive characterization of multilayer heterostructure quality, to estimate both deficiency and carrier transport. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
doi_str_mv 10.1002/pssc.201100611
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1322229515</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2932947901</sourcerecordid><originalsourceid>FETCH-LOGICAL-c3551-f6d18923e9d0542faaff221ebe48c6cbef1eff21aeb913ad3c83a00bb5f880ff3</originalsourceid><addsrcrecordid>eNqFkE1Lw0AQhoMoWKtXzwHPqTu73W1ylGhrSlGhfkAvy2Yza1PbpO4maP-9WyLFm3OZD95nZniD4BLIAAih11vn9IAS8I0AOAp6IIBEIIb02NexoJFgHE6DM-dWhDBOQPSC21Q1y7qo1-2mrNBprDSGtQkX1RyjXDkswiyLXrPw3SJW4dpPbLjEBm3tGtvqprXozoMTo9YOL35zP3gZ3z2n99HscZKlN7NIM84hMqKAOKEMk4LwITVKGUMpYI7DWAudowH0E1CYJ8BUwXTMFCF5zk0cE2NYP7jq9m5t_dmia-Sqbm3lT0pg1EfCgXvVoFNp_6OzaOTWlhtldxKI3Dsl907Jg1MeSDrgq1zj7h-1fJrP079s1LGla_D7wCr7IcWIjbh8e5jIaZKQ8XQ8kgv2Aw8wfMU</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1322229515</pqid></control><display><type>article</type><title>Cathodoluminescence of ZnSe-based II-VI green laser heterostructures</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Shakhmin, Alexey A. ; Sedova, Irina V. ; Sorokin, Sergey V. ; Zamoryanskaya, Maria V.</creator><creatorcontrib>Shakhmin, Alexey A. ; Sedova, Irina V. ; Sorokin, Sergey V. ; Zamoryanskaya, Maria V.</creatorcontrib><description>The cathodoluminescence technique to study the ZnSe‐based laser heterostructures is described. The heterostructures were grown by molecular beam epitaxy on GaAs (001) substrates and consist of bottom and top ZnMgSSe cladding layers and ZnCdSe/ZnSe quantum well or CdSe/ZnSe quantum dots sheets placed inside Zn(Mg)SSe/ZnSe graded index waveguide. The transport of charge carriers generated by electron beam in heterostructure was investigated using depth resolved cathodoluminescence. For that the dependence of cathodoluminescence intensity of active region on electron beam energy has been simulated using Monte‐Carlo calculation of carrier distribution on depth. It made possible the nondestructive characterization of multilayer heterostructure quality, to estimate both deficiency and carrier transport. (© 2012 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</description><identifier>ISSN: 1862-6351</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.201100611</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>carrier transport ; cathodoluminescence ; II-VI heterostructures</subject><ispartof>Physica status solidi. C, 2012-08, Vol.9 (8-9), p.1840-1843</ispartof><rights>Copyright © 2012 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><rights>Copyright © 2012 WILEY-VCH Verlag GmbH &amp; Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c3551-f6d18923e9d0542faaff221ebe48c6cbef1eff21aeb913ad3c83a00bb5f880ff3</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssc.201100611$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssc.201100611$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids></links><search><creatorcontrib>Shakhmin, Alexey A.</creatorcontrib><creatorcontrib>Sedova, Irina V.</creatorcontrib><creatorcontrib>Sorokin, Sergey V.</creatorcontrib><creatorcontrib>Zamoryanskaya, Maria V.</creatorcontrib><title>Cathodoluminescence of ZnSe-based II-VI green laser heterostructures</title><title>Physica status solidi. C</title><addtitle>Phys. Status Solidi C</addtitle><description>The cathodoluminescence technique to study the ZnSe‐based laser heterostructures is described. The heterostructures were grown by molecular beam epitaxy on GaAs (001) substrates and consist of bottom and top ZnMgSSe cladding layers and ZnCdSe/ZnSe quantum well or CdSe/ZnSe quantum dots sheets placed inside Zn(Mg)SSe/ZnSe graded index waveguide. The transport of charge carriers generated by electron beam in heterostructure was investigated using depth resolved cathodoluminescence. For that the dependence of cathodoluminescence intensity of active region on electron beam energy has been simulated using Monte‐Carlo calculation of carrier distribution on depth. It made possible the nondestructive characterization of multilayer heterostructure quality, to estimate both deficiency and carrier transport. (© 2012 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</description><subject>carrier transport</subject><subject>cathodoluminescence</subject><subject>II-VI heterostructures</subject><issn>1862-6351</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqFkE1Lw0AQhoMoWKtXzwHPqTu73W1ylGhrSlGhfkAvy2Yza1PbpO4maP-9WyLFm3OZD95nZniD4BLIAAih11vn9IAS8I0AOAp6IIBEIIb02NexoJFgHE6DM-dWhDBOQPSC21Q1y7qo1-2mrNBprDSGtQkX1RyjXDkswiyLXrPw3SJW4dpPbLjEBm3tGtvqprXozoMTo9YOL35zP3gZ3z2n99HscZKlN7NIM84hMqKAOKEMk4LwITVKGUMpYI7DWAudowH0E1CYJ8BUwXTMFCF5zk0cE2NYP7jq9m5t_dmia-Sqbm3lT0pg1EfCgXvVoFNp_6OzaOTWlhtldxKI3Dsl907Jg1MeSDrgq1zj7h-1fJrP079s1LGla_D7wCr7IcWIjbh8e5jIaZKQ8XQ8kgv2Aw8wfMU</recordid><startdate>201208</startdate><enddate>201208</enddate><creator>Shakhmin, Alexey A.</creator><creator>Sedova, Irina V.</creator><creator>Sorokin, Sergey V.</creator><creator>Zamoryanskaya, Maria V.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>201208</creationdate><title>Cathodoluminescence of ZnSe-based II-VI green laser heterostructures</title><author>Shakhmin, Alexey A. ; Sedova, Irina V. ; Sorokin, Sergey V. ; Zamoryanskaya, Maria V.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3551-f6d18923e9d0542faaff221ebe48c6cbef1eff21aeb913ad3c83a00bb5f880ff3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>carrier transport</topic><topic>cathodoluminescence</topic><topic>II-VI heterostructures</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shakhmin, Alexey A.</creatorcontrib><creatorcontrib>Sedova, Irina V.</creatorcontrib><creatorcontrib>Sorokin, Sergey V.</creatorcontrib><creatorcontrib>Zamoryanskaya, Maria V.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shakhmin, Alexey A.</au><au>Sedova, Irina V.</au><au>Sorokin, Sergey V.</au><au>Zamoryanskaya, Maria V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Cathodoluminescence of ZnSe-based II-VI green laser heterostructures</atitle><jtitle>Physica status solidi. C</jtitle><addtitle>Phys. Status Solidi C</addtitle><date>2012-08</date><risdate>2012</risdate><volume>9</volume><issue>8-9</issue><spage>1840</spage><epage>1843</epage><pages>1840-1843</pages><issn>1862-6351</issn><eissn>1610-1642</eissn><abstract>The cathodoluminescence technique to study the ZnSe‐based laser heterostructures is described. The heterostructures were grown by molecular beam epitaxy on GaAs (001) substrates and consist of bottom and top ZnMgSSe cladding layers and ZnCdSe/ZnSe quantum well or CdSe/ZnSe quantum dots sheets placed inside Zn(Mg)SSe/ZnSe graded index waveguide. The transport of charge carriers generated by electron beam in heterostructure was investigated using depth resolved cathodoluminescence. For that the dependence of cathodoluminescence intensity of active region on electron beam energy has been simulated using Monte‐Carlo calculation of carrier distribution on depth. It made possible the nondestructive characterization of multilayer heterostructure quality, to estimate both deficiency and carrier transport. (© 2012 WILEY‐VCH Verlag GmbH &amp; Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssc.201100611</doi><tpages>4</tpages></addata></record>
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subjects carrier transport
cathodoluminescence
II-VI heterostructures
title Cathodoluminescence of ZnSe-based II-VI green laser heterostructures
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T06%3A24%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Cathodoluminescence%20of%20ZnSe-based%20II-VI%20green%20laser%20heterostructures&rft.jtitle=Physica%20status%20solidi.%20C&rft.au=Shakhmin,%20Alexey%20A.&rft.date=2012-08&rft.volume=9&rft.issue=8-9&rft.spage=1840&rft.epage=1843&rft.pages=1840-1843&rft.issn=1862-6351&rft.eissn=1610-1642&rft_id=info:doi/10.1002/pssc.201100611&rft_dat=%3Cproquest_cross%3E2932947901%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1322229515&rft_id=info:pmid/&rfr_iscdi=true