Cathodoluminescence of ZnSe-based II-VI green laser heterostructures

The cathodoluminescence technique to study the ZnSe‐based laser heterostructures is described. The heterostructures were grown by molecular beam epitaxy on GaAs (001) substrates and consist of bottom and top ZnMgSSe cladding layers and ZnCdSe/ZnSe quantum well or CdSe/ZnSe quantum dots sheets placed inside Zn(Mg)SSe/ZnSe graded index waveguide. The transport of charge carriers generated by electron beam in heterostructure was investigated using depth resolved cathodoluminescence. For that the dependence of cathodoluminescence intensity of active region on electron beam energy has been simulated using Monte‐Carlo calculation of carrier distribution on depth. It made possible the nondestructive characterization of multilayer heterostructure quality, to estimate both deficiency and carrier transport. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)