Contact-free reactions between micropipes in bulk SiC growth

Contact-free reactions between micropipes in bulk SiC growth

It has been generally accepted that any reaction between micropipes in silicon carbide (SiC) crystals requires a direct contact of the micropipes. We propose a new model of contact‐free reactions that are realized through the emission and absorption of full‐core dislocations by micropipes. This mode...

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Veröffentlicht in:Physica status solidi. A, Applications and materials science Applications and materials science, 2012-08, Vol.209 (8), p.1432-1437
Hauptverfasser: Gutkin, Mikhail Yu, Sheinerman, Alexander G., Kohn, Victor G., Argunova, Tatiana S., Smirnov, Mikhail A., Je, Jung Ho
Format: Artikel
Sprache:eng
Schlagworte:
crystal structure
defects
single crystal growth
synchrotron X-ray diffraction
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Zusammenfassung:It has been generally accepted that any reaction between micropipes in silicon carbide (SiC) crystals requires a direct contact of the micropipes. We propose a new model of contact‐free reactions that are realized through the emission and absorption of full‐core dislocations by micropipes. This model can explain the correlated reduction in micropipe radii in the samples with low micropipe densities which has been observed in synchrotron radiation (SR) phase contrast images supported by computer simulations. We provide a theoretical description of a contact‐free reaction between two parallel micropipes.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.201127682