Improved multicrystalline silicon ingot crystal quality through seed growth for high efficiency solar cells

ABSTRACT Work on silicon crystal quality improvement and defect control has been carried out on lab‐scale seeded growth ingots allowing wafers with controlled grain orientations. Both and monocrystalline‐like ingots were produced using a combination of quartz rod dipping and a modulated conductive heat extraction system, made in‐house, in a directional solidification system. Two mono‐like wafer morphology types have been produced. Their structural and electrical properties are presented in detail. Copyright © 2011 John Wiley & Sons, Ltd. Work on silicon crystal quality improvement and defect control has been carried out on lab‐scale seeded growth ingots allowing wafers with controlled grain orientations. Both and monocrystalline‐like ingots were produced using a combination of quartz rod dipping and a modulated conductive heat extraction system, made in‐house, in a directional solidification system. Two mono‐like wafer morphology types have been produced. Their structural and electrical properties are presented in detail.