Loss of methylation at the IFNG promoter and CNS-1 is associated with the development of functional IFN-[gamma] memory in human CD4+ T lymphocytes
Cytokine memory for IFN-[gamma] production by effector/memory Th1 cells plays a key role in both protective and pathological immune responses. To understand the epigenetic mechanism determining the ontogeny of effector/memory Th1 cells characterized by stable effector functions, we identified a T-ce...
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Veröffentlicht in: | European journal of immunology 2013-03, Vol.43 (3), p.793 |
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Sprache: | eng |
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Zusammenfassung: | Cytokine memory for IFN-[gamma] production by effector/memory Th1 cells plays a key role in both protective and pathological immune responses. To understand the epigenetic mechanism determining the ontogeny of effector/memory Th1 cells characterized by stable effector functions, we identified a T-cell-specific methylation pattern at the IFNG promoter and CNS-1 in ex vivo effector/memory Th1 cells, and investigated methylation dynamics of these regions during the development of effector/memory Th1 cells. During Th1 differentiation, demethylation occurred at both the promoter and CNS-1 regions of IFNG as early as 16 h, and this process was independent of cell proliferation and DNA synthesis. Using an IFN-[gamma] capture assay, we found early IFN-[gamma]-producing cells from 2-day differentiating cultures acquired "permissive" levels of demethylation and developed into effector/memory Th1 cells undergoing progressive demethylation at the IFNG promoter and CNS-1 when induced by IL-12. Methylation levels of these regions in effector/memory Th1 cells of peripheral blood from rheumatoid arthritis patients correlated inversely with reduced frequencies of IFN-[gamma]-producers, coincident with recruitment of effector/memory Th1 cells to the site of inflammation. Thus, after termination of TCR stimulation, IL-12 signaling potentiates the stable functional IFN-[gamma] memory in effector/memory Th1 cells characterized by hypomethylation at the IFNG promoter and CNS-1. [PUBLICATION ABSTRACT] |
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ISSN: | 0014-2980 1521-4141 |
DOI: | 10.1002/eji.201242858 |