Formation and structure of dislocation networks developed during high-temperature deformation of MgO

Cell boundaries formed, during transient as well as during steady-state creep of < 100 >-oriented MgO single crystals between 1700 K and 2100 K have been investigated by transmission electron microscopy. The observed dislocation networks in the cell boundaries can be explained by a mechanism w...

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Veröffentlicht in:Philosophical magazine (London, England : 1945) England : 1945), 1974-11, Vol.30 (5), p.1009-1021
Hauptverfasser: Reppich, B., Hüther, W.
Format: Artikel
Sprache:eng
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Zusammenfassung:Cell boundaries formed, during transient as well as during steady-state creep of < 100 >-oriented MgO single crystals between 1700 K and 2100 K have been investigated by transmission electron microscopy. The observed dislocation networks in the cell boundaries can be explained by a mechanism which is characterized by two stages: (i) Formation of cell walls with a simple character by glide dislocations of primary {110} dodecahedral slip systems. (ii) Reaction of wall dislocations, acting as a 'forest', with glide dislocations, which move on diverse slip systems from the cell interior and knit together to form hexagonal networks by stress-induced climb processes analogous to the mechanism proposed by Lindroos and Miekk-Oja for f.o.c. metals.
ISSN:0031-8086
DOI:10.1080/14786437408207254