Charge trapping and annealing in high-[kappa] gate dielectrics
By comparison to a theoretical capacitance-voltage (CV) curve, the FG annealed devices are found to have a large preirradiation interface trapped charge density of ...1011 cm-2, whereas devices annealed in O2 and FG show a large density (...1011 cm-2) of negative bulk charge.
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| Veröffentlicht in: | IEEE transactions on nuclear science 2004-12, Vol.51 (6), p.3143 |
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| container_issue | 6 |
| container_start_page | 3143 |
| container_title | IEEE transactions on nuclear science |
| container_volume | 51 |
| creator | Felix, J.A Shaneyfelt, M.R Fleetwood, D.M Schwank, J.R Dodd, P.E Gusev, E.P Fleming, R.M D'Emic, C |
| description | By comparison to a theoretical capacitance-voltage (CV) curve, the FG annealed devices are found to have a large preirradiation interface trapped charge density of ...1011 cm-2, whereas devices annealed in O2 and FG show a large density (...1011 cm-2) of negative bulk charge. |
| doi_str_mv | 10.1109/TNS.2004.839204 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_1269678598</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2866740801</sourcerecordid><originalsourceid>FETCH-proquest_journals_12696785983</originalsourceid><addsrcrecordid>eNqNik0LgjAAhkcUZB_nroPOs02dbpcuUnTqkrcIGbrmTKZt8_9n0A_o8PLw8LwA7AgOCcH8UFxvYYRxErKYRziZgYBQyhChGZuDAGPCEE84X4KVc-2kCcU0AMe8EVZJ6K0YBm0UFKaeZqTovqYNbLRq0P01ZfGASngJay07WXmrK7cBi6fonNz-uAb786nIL2iw_XuUzpdtP1ozpZJEKU8zRjmL_3t9AJI7PoE</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1269678598</pqid></control><display><type>article</type><title>Charge trapping and annealing in high-[kappa] gate dielectrics</title><source>IEEE Electronic Library (IEL)</source><creator>Felix, J.A ; Shaneyfelt, M.R ; Fleetwood, D.M ; Schwank, J.R ; Dodd, P.E ; Gusev, E.P ; Fleming, R.M ; D'Emic, C</creator><creatorcontrib>Felix, J.A ; Shaneyfelt, M.R ; Fleetwood, D.M ; Schwank, J.R ; Dodd, P.E ; Gusev, E.P ; Fleming, R.M ; D'Emic, C</creatorcontrib><description>By comparison to a theoretical capacitance-voltage (CV) curve, the FG annealed devices are found to have a large preirradiation interface trapped charge density of ...1011 cm-2, whereas devices annealed in O2 and FG show a large density (...1011 cm-2) of negative bulk charge.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2004.839204</identifier><language>eng</language><publisher>New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</publisher><subject>Annealing</subject><ispartof>IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3143</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Felix, J.A</creatorcontrib><creatorcontrib>Shaneyfelt, M.R</creatorcontrib><creatorcontrib>Fleetwood, D.M</creatorcontrib><creatorcontrib>Schwank, J.R</creatorcontrib><creatorcontrib>Dodd, P.E</creatorcontrib><creatorcontrib>Gusev, E.P</creatorcontrib><creatorcontrib>Fleming, R.M</creatorcontrib><creatorcontrib>D'Emic, C</creatorcontrib><title>Charge trapping and annealing in high-[kappa] gate dielectrics</title><title>IEEE transactions on nuclear science</title><description>By comparison to a theoretical capacitance-voltage (CV) curve, the FG annealed devices are found to have a large preirradiation interface trapped charge density of ...1011 cm-2, whereas devices annealed in O2 and FG show a large density (...1011 cm-2) of negative bulk charge.</description><subject>Annealing</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNqNik0LgjAAhkcUZB_nroPOs02dbpcuUnTqkrcIGbrmTKZt8_9n0A_o8PLw8LwA7AgOCcH8UFxvYYRxErKYRziZgYBQyhChGZuDAGPCEE84X4KVc-2kCcU0AMe8EVZJ6K0YBm0UFKaeZqTovqYNbLRq0P01ZfGASngJay07WXmrK7cBi6fonNz-uAb786nIL2iw_XuUzpdtP1ozpZJEKU8zRjmL_3t9AJI7PoE</recordid><startdate>20041201</startdate><enddate>20041201</enddate><creator>Felix, J.A</creator><creator>Shaneyfelt, M.R</creator><creator>Fleetwood, D.M</creator><creator>Schwank, J.R</creator><creator>Dodd, P.E</creator><creator>Gusev, E.P</creator><creator>Fleming, R.M</creator><creator>D'Emic, C</creator><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>7QF</scope><scope>7QL</scope><scope>7QQ</scope><scope>7SC</scope><scope>7SE</scope><scope>7SP</scope><scope>7SR</scope><scope>7T7</scope><scope>7TA</scope><scope>7TB</scope><scope>7U5</scope><scope>7U9</scope><scope>8BQ</scope><scope>8FD</scope><scope>C1K</scope><scope>F28</scope><scope>FR3</scope><scope>H8D</scope><scope>H94</scope><scope>JG9</scope><scope>JQ2</scope><scope>KR7</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope><scope>M7N</scope><scope>P64</scope></search><sort><creationdate>20041201</creationdate><title>Charge trapping and annealing in high-[kappa] gate dielectrics</title><author>Felix, J.A ; Shaneyfelt, M.R ; Fleetwood, D.M ; Schwank, J.R ; Dodd, P.E ; Gusev, E.P ; Fleming, R.M ; D'Emic, C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_12696785983</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Annealing</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Felix, J.A</creatorcontrib><creatorcontrib>Shaneyfelt, M.R</creatorcontrib><creatorcontrib>Fleetwood, D.M</creatorcontrib><creatorcontrib>Schwank, J.R</creatorcontrib><creatorcontrib>Dodd, P.E</creatorcontrib><creatorcontrib>Gusev, E.P</creatorcontrib><creatorcontrib>Fleming, R.M</creatorcontrib><creatorcontrib>D'Emic, C</creatorcontrib><collection>Aluminium Industry Abstracts</collection><collection>Bacteriology Abstracts (Microbiology B)</collection><collection>Ceramic Abstracts</collection><collection>Computer and Information Systems Abstracts</collection><collection>Corrosion Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Industrial and Applied Microbiology Abstracts (Microbiology A)</collection><collection>Materials Business File</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Virology and AIDS Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Environmental Sciences and Pollution Management</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Aerospace Database</collection><collection>AIDS and Cancer Research Abstracts</collection><collection>Materials Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><collection>Algology Mycology and Protozoology Abstracts (Microbiology C)</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>IEEE transactions on nuclear science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Felix, J.A</au><au>Shaneyfelt, M.R</au><au>Fleetwood, D.M</au><au>Schwank, J.R</au><au>Dodd, P.E</au><au>Gusev, E.P</au><au>Fleming, R.M</au><au>D'Emic, C</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Charge trapping and annealing in high-[kappa] gate dielectrics</atitle><jtitle>IEEE transactions on nuclear science</jtitle><date>2004-12-01</date><risdate>2004</risdate><volume>51</volume><issue>6</issue><spage>3143</spage><pages>3143-</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><abstract>By comparison to a theoretical capacitance-voltage (CV) curve, the FG annealed devices are found to have a large preirradiation interface trapped charge density of ...1011 cm-2, whereas devices annealed in O2 and FG show a large density (...1011 cm-2) of negative bulk charge.</abstract><cop>New York</cop><pub>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</pub><doi>10.1109/TNS.2004.839204</doi></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0018-9499 |
| ispartof | IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3143 |
| issn | 0018-9499 1558-1578 |
| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | Annealing |
| title | Charge trapping and annealing in high-[kappa] gate dielectrics |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T03%3A00%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Charge%20trapping%20and%20annealing%20in%20high-%5Bkappa%5D%20gate%20dielectrics&rft.jtitle=IEEE%20transactions%20on%20nuclear%20science&rft.au=Felix,%20J.A&rft.date=2004-12-01&rft.volume=51&rft.issue=6&rft.spage=3143&rft.pages=3143-&rft.issn=0018-9499&rft.eissn=1558-1578&rft_id=info:doi/10.1109/TNS.2004.839204&rft_dat=%3Cproquest%3E2866740801%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1269678598&rft_id=info:pmid/&rfr_iscdi=true |