Charge trapping and annealing in high-[kappa] gate dielectrics

Charge trapping and annealing in high-[kappa] gate dielectrics

By comparison to a theoretical capacitance-voltage (CV) curve, the FG annealed devices are found to have a large preirradiation interface trapped charge density of ...1011 cm-2, whereas devices annealed in O2 and FG show a large density (...1011 cm-2) of negative bulk charge.

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Veröffentlicht in:IEEE transactions on nuclear science 2004-12, Vol.51 (6), p.3143
Hauptverfasser: Felix, J.A, Shaneyfelt, M.R, Fleetwood, D.M, Schwank, J.R, Dodd, P.E, Gusev, E.P, Fleming, R.M, D'Emic, C
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
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Zusammenfassung:By comparison to a theoretical capacitance-voltage (CV) curve, the FG annealed devices are found to have a large preirradiation interface trapped charge density of ...1011 cm-2, whereas devices annealed in O2 and FG show a large density (...1011 cm-2) of negative bulk charge.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2004.839204