A study on the formation mechanism of ytterbium silicide for Schottky contact applications

This article reports some new details of the Yb silicide formation mechanism. The combination of high‐resolution transmission electron microscopy and energy dispersive spectroscopy helped us to unravel several interesting aspects of the silicidation process at the early stage. Interdiffusion between...

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Veröffentlicht in:Surface and interface analysis 2012-11, Vol.44 (11-12), p.1497-1502
Hauptverfasser: Na, Sekwon, Choi, Hwayoul, Lee, Byunghoon, Choi, Juyun, Seo, Yujin, Kim, Hyoungsub, Lee, Seok-Hee, Lee, Hoo-Jeong
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Sprache:eng
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Zusammenfassung:This article reports some new details of the Yb silicide formation mechanism. The combination of high‐resolution transmission electron microscopy and energy dispersive spectroscopy helped us to unravel several interesting aspects of the silicidation process at the early stage. Interdiffusion between Si and Yb was extensive even at low temperatures (
ISSN:0142-2421
1096-9918
DOI:10.1002/sia.4985