The secondary ions emission from Si under low-energy Cs bombardment in a presence of oxygen

Secondary negative ions yields of elements in the IIIrd, IVth, Vth periodic table groups emitted under Cs+ bombardment of Si surface in presence of oxygen are reported. The ion yield variation on oxygen partial pressure in the analytical chamber obtained for different ions allows taking a step forwa...

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Veröffentlicht in:	Surface and interface analysis 2013-01, Vol.45 (1), p.90-92
1. Verfasser:	Merkulov, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic, molecular, and ion beam impact and interactions with surfaces Condensed matter: electronic structure, electrical, magnetic, and optical properties Electron and ion emission by liquids and solids impact phenomena Exact sciences and technology Impact phenomena (including electron spectra and sputtering) ion yield oxygen on Cs-covered Si surface Physics secondary ion mass spectrometry
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Zusammenfassung:	Secondary negative ions yields of elements in the IIIrd, IVth, Vth periodic table groups emitted under Cs+ bombardment of Si surface in presence of oxygen are reported. The ion yield variation on oxygen partial pressure in the analytical chamber obtained for different ions allows taking a step forward the development of secondary ion emission model. The ion yield enhancement under particular oxygen surface coverage offers an approach for quantitative analysis of ultra‐shallow semiconductor structures and interfaces. Copyright © 2012 John Wiley & Sons, Ltd.
ISSN:	0142-2421 1096-9918
DOI:	10.1002/sia.5132