Synthesis and thin-film orientation of poly(styrene-block-trimethylsilylisoprene)

The successful synthesis, characterization, and directed self‐assembly of a silicon‐containing block copolymer, poly(styrene‐block‐trimethylsilylisoprene) (P(S‐b‐TMSI)), which has much higher oxygen etch contrast than the de facto standard, poly(styrene‐block‐methyl methacrylate) is reported. A Saku...

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Veröffentlicht in:Journal of polymer science. Part A, Polymer chemistry Polymer chemistry, 2013-01, Vol.51 (2), p.290-297
Hauptverfasser: Bates, Christopher M., Pantoja, Marco A. Bedolla, Strahan, Jeffrey R., Dean, Leon M., Mueller, Brennen K., Ellison, Christopher J., Nealey, Paul F., Willson, C. Grant
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Sprache:eng
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Zusammenfassung:The successful synthesis, characterization, and directed self‐assembly of a silicon‐containing block copolymer, poly(styrene‐block‐trimethylsilylisoprene) (P(S‐b‐TMSI)), which has much higher oxygen etch contrast than the de facto standard, poly(styrene‐block‐methyl methacrylate) is reported. A Sakurai, Grignard‐type coupling reaction provided the key monomer in good yield. Living anionic polymerization was employed to prepare the block copolymer, which has very low polydispersity. P(S‐b‐TMSI) was successfully ordered and oriented by directed self‐assembly. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013 The synthesis of a diblock copolymer is described, which undergoes spontaneous assembly into cylindrical patterns. The matrix surrounding the cylinders can be selectively etched away to leave structures with dimensions on the nanoscale. The orientation and ordering of these structures is demonstrated. Structures of this sort are valuable for use in nano‐manufacturing of devices such as microelectronics and hard disk drives.
ISSN:0887-624X
1099-0518
DOI:10.1002/pola.26375