Asymmetric leakage in (Ba, Sr)TiO3 nanoparticle/parylene-C composite capacitors
Nanoparticle polymer composite capacitors have been examined for some time as a route to high performance, printable capacitors. One approach to creating these composites is to use a particle film together with vapor deposited polymers, which can yield high performance, but also forms a structurally...
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Veröffentlicht in: | Journal of polymer science. Part B, Polymer physics Polymer physics, 2013-01, Vol.51 (1), p.35-38 |
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Sprache: | eng |
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Zusammenfassung: | Nanoparticle polymer composite capacitors have been examined for some time as a route to high performance, printable capacitors. One approach to creating these composites is to use a particle film together with vapor deposited polymers, which can yield high performance, but also forms a structurally asymmetric device. The performance of a nanoparticle (Ba, Sr)TiO3 (BST)/parylene‐C composite capacitor is compared to that of a nanoparticle BST capacitor without the polymer layer under both directions of bias. The composite device shows a five orders of magnitude improvement in the leakage current under positive bias of the bottom electrode relative to the pure‐particle device, and four orders of magnitude improvement when the top electrode is positively biased. The voltage tolerance of the device is also improved and asymmetric (44 V vs. 28 V in bottom and top positive bias, respectively). This study demonstrates the advantage of this class of composite device construction, but also shows that proper application of the device bias in this type of asymmetrical system can yield an additional benefit. © 2012 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2013
Nanoparticle–polymer composite capacitors have been examined for some time as a route to high performance, printable capacitors. This study demonstrates both the advantage of the asymmetric composite capacitor construction through combination of vapor deposited polymers with spin‐coated (Ba, Sr)TiO3 nanoparticles, and that proper application of the device bias in this type of asymmetrical system can yield additional improvement in voltage tolerance and leakage current. |
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ISSN: | 0887-6266 1099-0488 |
DOI: | 10.1002/polb.23156 |