Transformation of the defects of gold in silicon: Structural phase transition

Based on the experimental data on the specific heat and photoconductivity of silicon doped with gold, the possible mechanisms of transformation of the impurity centers of gold in the crystal lattice of silicon and accordingly phase transitions are discussed.[PUBLICATION ABSTRACT]

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Bibliographische Detailangaben
Veröffentlicht in:	Journal of engineering physics and thermophysics 2003-09, Vol.76 (5), p.1084-1088
Hauptverfasser:	ZAKIROV, A. S, IGAMBERDIEV, Kh. T, MAMADALIMOV, A. T, MUSAEVA, L. F, SAIDOV, A. A
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Crystal lattices Defects and impurities in crystals microstructure Doping and impurity implantation in germanium and silicon Electron states Elemental semiconductors Exact sciences and technology Gold Impurity and defect levels Phase transitions Physics Structure of solids and liquids crystallography
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Beschreibung
Zusammenfassung:	Based on the experimental data on the specific heat and photoconductivity of silicon doped with gold, the possible mechanisms of transformation of the impurity centers of gold in the crystal lattice of silicon and accordingly phase transitions are discussed.[PUBLICATION ABSTRACT]
ISSN:	1062-0125 1573-871X
DOI:	10.1023/B:JOEP.0000003224.20677.6b