Hybrid model of thermostabilization of the drain current in n-channel MOS transistors

Hybrid model of thermostabilization of the drain current in n-channel MOS transistors

A hybrid model, which makes it possible to calculate the influence of the drain voltage and the temperature on the mobility of electrons in the n-channel of silicon MOS transistors with a high-alloy substrate in the linear regime of their operation on the basis of a combination of analytical approxi...

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Veröffentlicht in:Journal of engineering physics and thermophysics 2003-07, Vol.76 (4), p.864-867
Hauptverfasser: ANDREEV, A. D, BORZDOV, V. M, VALIEV, A. A, ZHEVNYAK, O. G, KOMAROV, F. F
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Electronics
Exact sciences and technology
Monte Carlo simulation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Studies
Transistors
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Zusammenfassung:A hybrid model, which makes it possible to calculate the influence of the drain voltage and the temperature on the mobility of electrons in the n-channel of silicon MOS transistors with a high-alloy substrate in the linear regime of their operation on the basis of a combination of analytical approximations and modeling of electron transfer by the Monte Carlo method, has been proposed.[PUBLICATION ABSTRACT]
ISSN:1062-0125
1573-871X
DOI:10.1023/A:1025614608299