Control of the properties of thin-film systems with the use of pulsed photon treatment

We have developed a radically new technological process of making very large-scale integrated circuits, which has no analogs and is based on the use of fast heat treatments for forming gettering layers, silicon oxidation, annealing of ion-doped layers, fusion of phosphoro- and borophosphorosilicate...

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Veröffentlicht in:Journal of engineering physics and thermophysics 2003-07, Vol.76 (4), p.854-857
Hauptverfasser: PILIPPENKO, V. A, PONOMAR', V. N, GORUSHKO, V. A
Format: Artikel
Sprache:eng
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Zusammenfassung:We have developed a radically new technological process of making very large-scale integrated circuits, which has no analogs and is based on the use of fast heat treatments for forming gettering layers, silicon oxidation, annealing of ion-doped layers, fusion of phosphoro- and borophosphorosilicate glasses, forming silicides, and increasing the thermostability of aluminum metallization.[PUBLICATION ABSTRACT]
ISSN:1062-0125
1573-871X
DOI:10.1023/A:1025610507391