Control of the properties of thin-film systems with the use of pulsed photon treatment
We have developed a radically new technological process of making very large-scale integrated circuits, which has no analogs and is based on the use of fast heat treatments for forming gettering layers, silicon oxidation, annealing of ion-doped layers, fusion of phosphoro- and borophosphorosilicate...
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Veröffentlicht in: | Journal of engineering physics and thermophysics 2003-07, Vol.76 (4), p.854-857 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | We have developed a radically new technological process of making very large-scale integrated circuits, which has no analogs and is based on the use of fast heat treatments for forming gettering layers, silicon oxidation, annealing of ion-doped layers, fusion of phosphoro- and borophosphorosilicate glasses, forming silicides, and increasing the thermostability of aluminum metallization.[PUBLICATION ABSTRACT] |
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ISSN: | 1062-0125 1573-871X |
DOI: | 10.1023/A:1025610507391 |