3D modeling of thermal annealing of ion-implanted impurities

Three-dimensional (3D) mathematical modeling of the technological operations reflects most realistically the physical processes that occur in formation of structural elements of superlarge integrated circuits (SLICs). However multidimensional modeling of the technology of SLIC manufacture requires the use of economical algorithms for numerical solution of the initial mathematical problem. An efficient procedure for calculating numerically the 3D profile of the dopant distribution formed as a result of thermal annealing after implantation is proposed. The problem of the modeling of the diffusional redistribution of the dopant in annealing in an active medium is considered. Some results of calculations are discussed.[PUBLICATION ABSTRACT]