A Fully Analytic Model of Large Area Silicon p-i-n Photodiodes Verified at Short Wavelengths

A Fully Analytic Model of Large Area Silicon p-i-n Photodiodes Verified at Short Wavelengths

A fully analytic analysis of the frequency response of a homo-structure p-i-n photodiode is developed to characterize high-speed large-area p-i-n photodiodes. Therefore, the model can easily be implemented in mathematical simulation tools for system analysis. The model accurately describes drift-, d...

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Veröffentlicht in:Journal of lightwave technology 2010-09, Vol.28 (18), p.2646-2653
Hauptverfasser: Loquai, Sven, Bunge, Christian-Alexander, Ziemann, Olaf, Schmauss, Bernhard, Kruglov, Roman
Format: Artikel
Sprache:eng
Schlagworte:
Analytic model
Analytical models
Applied sciences
Bandwidth
Computer simulation
Contact resistance
Diffusion
Electronics
Exact sciences and technology
Frequency
High speed
large area
Mathematical analysis
Mathematical models
Noise levels
Nonlinear equations
Optoelectronic devices
p-i-n photodetector
Photoconductivity
Photodiodes
PIN photodiodes
Poisson equations
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
short wavelength
Silicon
Transfer functions
Wavelengths
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Beschreibung
Zusammenfassung:A fully analytic analysis of the frequency response of a homo-structure p-i-n photodiode is developed to characterize high-speed large-area p-i-n photodiodes. Therefore, the model can easily be implemented in mathematical simulation tools for system analysis. The model accurately describes drift-, diffusion- and parasitic effects and has been experimentally verified up to 3 GHz for a variety of different wavelength from 405 nm to 850 nm far beyond the 3 dB cutoff frequency (up to -35 dB).
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2010.2059372