DC Townsend Discharge in Nitrogen: Temperature-Dependent Phenomena

Low‐current Townsend discharge in nitrogen has been studied in the temperature range of T = 100–300 K in a semiconductor‐gas‐discharge structure. It was found that the sustaining voltage US increases with time when a current is passed through the structure at low T. This effect was not observed at r...

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Veröffentlicht in:	Contributions to plasma physics (1988) 2012-09, Vol.52 (8), p.682-691
Hauptverfasser:	Lodygin, A. N., Portsel, L. M., Astrov, Yu. A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cryogenic Townsend discharge electrode phenomena semiconductor−discharge-gap device
Online-Zugang:	Volltext
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