Amorphous InGaZnO Thin-Film Transistors-Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range

A combination of the multifrequency C - V and the generation-recombination current spectroscopy is proposed for a complete extraction of density of states (DOS) in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) over the full subband-gap energy range ( EV ≤ E ≤ EC ) including the interface tra...

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Veröffentlicht in:IEEE transactions on electron devices 2012-10, Vol.59 (10), p.2689-2698
Hauptverfasser: KIM, Yongsik, BAE, Minkyung, KIM, Woojoon, KONG, Dongsik, HYUN KWANG JEONG, KIM, Hyungtak, CHOI, Sunwoong, DONG MYONG KIM, DAE HWAN KIM
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Sprache:eng
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Zusammenfassung:A combination of the multifrequency C - V and the generation-recombination current spectroscopy is proposed for a complete extraction of density of states (DOS) in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) over the full subband-gap energy range ( EV ≤ E ≤ EC ) including the interface trap density between the gate oxide and the a-IGZO active layer. In particular, our result on the separate extraction of acceptor- and donor-like DOS is noticeable for a systematic design of amorphous oxide semiconductor TFTs because the former determines their dc characteristics and the latter does their threshold voltage ( VT ) instability under practical operation conditions. The proposed approach can be used to optimize the fabrication process of thin-film materials with high mobility and stability for mass-production-level amorphous oxide semiconductor TFTs.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2012.2208969