Amorphous InGaZnO Thin-Film Transistors-Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range
A combination of the multifrequency C - V and the generation-recombination current spectroscopy is proposed for a complete extraction of density of states (DOS) in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) over the full subband-gap energy range ( EV ≤ E ≤ EC ) including the interface tra...
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Veröffentlicht in: | IEEE transactions on electron devices 2012-10, Vol.59 (10), p.2689-2698 |
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Sprache: | eng |
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Zusammenfassung: | A combination of the multifrequency C - V and the generation-recombination current spectroscopy is proposed for a complete extraction of density of states (DOS) in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) over the full subband-gap energy range ( EV ≤ E ≤ EC ) including the interface trap density between the gate oxide and the a-IGZO active layer. In particular, our result on the separate extraction of acceptor- and donor-like DOS is noticeable for a systematic design of amorphous oxide semiconductor TFTs because the former determines their dc characteristics and the latter does their threshold voltage ( VT ) instability under practical operation conditions. The proposed approach can be used to optimize the fabrication process of thin-film materials with high mobility and stability for mass-production-level amorphous oxide semiconductor TFTs. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2012.2208969 |