High-Efficiency Silicon Photodiode Detector for Sub-keV Electron Microscopy
A silicon photodiode detector is presented for use in scanning electron microscopy (SEM). Enhanced imaging capabilities are achieved for sub-keV electron energy values by employing a pure boron (PureB) layer photodiode technology to deposit nanometer-thin photosensitive anodes. As a result, imaging...
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| Veröffentlicht in: | IEEE transactions on electron devices 2012-10, Vol.59 (10), p.2707-2714 |
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| creator | Sakic, A. van Veen, G. Kooijman, K. Vogelsang, P. Scholtes, T. L. M. de Boer, W. B. Derakhshandeh, J. Wien, W. H. A. Milosavljevic, S. Nanver, L. K. |
| description | A silicon photodiode detector is presented for use in scanning electron microscopy (SEM). Enhanced imaging capabilities are achieved for sub-keV electron energy values by employing a pure boron (PureB) layer photodiode technology to deposit nanometer-thin photosensitive anodes. As a result, imaging using backscattered electrons is demonstrated for 50-eV electron landing energy values. The detector is built up of several closely packed photodiodes, and to obtain high scanning speed, each photodiode is engineered with low series resistance and low capacitance values. The low capacitance ( |
| doi_str_mv | 10.1109/TED.2012.2207960 |
| format | Article |
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L. M. ; de Boer, W. B. ; Derakhshandeh, J. ; Wien, W. H. A. ; Milosavljevic, S. ; Nanver, L. K.</creator><creatorcontrib>Sakic, A. ; van Veen, G. ; Kooijman, K. ; Vogelsang, P. ; Scholtes, T. L. M. ; de Boer, W. B. ; Derakhshandeh, J. ; Wien, W. H. A. ; Milosavljevic, S. ; Nanver, L. K.</creatorcontrib><description>A silicon photodiode detector is presented for use in scanning electron microscopy (SEM). Enhanced imaging capabilities are achieved for sub-keV electron energy values by employing a pure boron (PureB) layer photodiode technology to deposit nanometer-thin photosensitive anodes. As a result, imaging using backscattered electrons is demonstrated for 50-eV electron landing energy values. The detector is built up of several closely packed photodiodes, and to obtain high scanning speed, each photodiode is engineered with low series resistance and low capacitance values. The low capacitance (<; 3 pF/mm 2 ) is facilitated by thick, almost intrinsically-doped epitaxial layers grown to achieve the necessarily wide depletion regions. For the low series resistance, diode metallization has been patterned into a conductive grid directly on top of the nanometer-thin PureB-layer front-entrance window. Finally, a through-wafer aperture in the middle of the detector is micromachined for flexible positioning in the SEM system.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2012.2207960</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Backscattered electrons (BSEs) ; Boron ; boron layer ; Capacitance ; Current measurement ; Detectors ; Diodes ; electron detector ; Electron energy ; Electronics ; Exact sciences and technology ; General equipment and techniques ; Imaging ; Instruments, apparatus, components and techniques common to several branches of physics and astronomy ; low-energy electrons ; Optoelectronic devices ; Photodiode detectors ; Photodiodes ; Physics ; Scanning electron microscopy ; Scanning probe microscopes, components and techniques ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing ; Silicon ; silicon epitaxy ; silicon photodiode ; Surface treatment</subject><ispartof>IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2707-2714</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Oct 2012</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c354t-d414f2523fe772f7300ca0ad163353e705fd168e5f11b89019c0719ecb3ee7a43</citedby><cites>FETCH-LOGICAL-c354t-d414f2523fe772f7300ca0ad163353e705fd168e5f11b89019c0719ecb3ee7a43</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6261542$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6261542$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26443060$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Sakic, A.</creatorcontrib><creatorcontrib>van Veen, G.</creatorcontrib><creatorcontrib>Kooijman, K.</creatorcontrib><creatorcontrib>Vogelsang, P.</creatorcontrib><creatorcontrib>Scholtes, T. L. M.</creatorcontrib><creatorcontrib>de Boer, W. B.</creatorcontrib><creatorcontrib>Derakhshandeh, J.</creatorcontrib><creatorcontrib>Wien, W. H. A.</creatorcontrib><creatorcontrib>Milosavljevic, S.</creatorcontrib><creatorcontrib>Nanver, L. K.</creatorcontrib><title>High-Efficiency Silicon Photodiode Detector for Sub-keV Electron Microscopy</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>A silicon photodiode detector is presented for use in scanning electron microscopy (SEM). Enhanced imaging capabilities are achieved for sub-keV electron energy values by employing a pure boron (PureB) layer photodiode technology to deposit nanometer-thin photosensitive anodes. As a result, imaging using backscattered electrons is demonstrated for 50-eV electron landing energy values. The detector is built up of several closely packed photodiodes, and to obtain high scanning speed, each photodiode is engineered with low series resistance and low capacitance values. The low capacitance (<; 3 pF/mm 2 ) is facilitated by thick, almost intrinsically-doped epitaxial layers grown to achieve the necessarily wide depletion regions. For the low series resistance, diode metallization has been patterned into a conductive grid directly on top of the nanometer-thin PureB-layer front-entrance window. Finally, a through-wafer aperture in the middle of the detector is micromachined for flexible positioning in the SEM system.</description><subject>Applied sciences</subject><subject>Backscattered electrons (BSEs)</subject><subject>Boron</subject><subject>boron layer</subject><subject>Capacitance</subject><subject>Current measurement</subject><subject>Detectors</subject><subject>Diodes</subject><subject>electron detector</subject><subject>Electron energy</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>General equipment and techniques</subject><subject>Imaging</subject><subject>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</subject><subject>low-energy electrons</subject><subject>Optoelectronic devices</subject><subject>Photodiode detectors</subject><subject>Photodiodes</subject><subject>Physics</subject><subject>Scanning electron microscopy</subject><subject>Scanning probe microscopes, components and techniques</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing</subject><subject>Silicon</subject><subject>silicon epitaxy</subject><subject>silicon photodiode</subject><subject>Surface treatment</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkEtLAzEQgIMoWB93wcuCCF62ziSbpHsUrQ9UFHxclzSdaHTd1GR76L83tcWDh2Emk2-G5GPsAGGICPXp8_hiyAH5kHPQtYINNkApdVmrSm2yAQCOylqMxDbbSekjH1VV8QG7vfZv7-XYOW89dXZRPPnW29AVj--hD1MfplRcUE-2D7FwOZ7mk_KTXotxm3sxg_fexpBsmC322JYzbaL9dd5lL5fj5_Pr8u7h6ub87K60QlZ9Oa2wclxy4Uhr7rQAsAbMFJUQUpAG6XI9IukQJ6MasLagsSY7EUTaVGKXnaz2zmL4nlPqmy-fLLWt6SjMU4MCpZIgUWT06B_6Eeaxy69rEFSdQa4xU7Cilj9JkVwzi_7LxEWGmqXdJtttlnabtd08crxebJI1rYumsz79zfFsV8Avd7jiPBH9XSuuUFZc_ABAR4CE</recordid><startdate>20121001</startdate><enddate>20121001</enddate><creator>Sakic, A.</creator><creator>van Veen, G.</creator><creator>Kooijman, K.</creator><creator>Vogelsang, P.</creator><creator>Scholtes, T. L. M.</creator><creator>de Boer, W. B.</creator><creator>Derakhshandeh, J.</creator><creator>Wien, W. H. A.</creator><creator>Milosavljevic, S.</creator><creator>Nanver, L. K.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20121001</creationdate><title>High-Efficiency Silicon Photodiode Detector for Sub-keV Electron Microscopy</title><author>Sakic, A. ; van Veen, G. ; Kooijman, K. ; Vogelsang, P. ; Scholtes, T. L. M. ; de Boer, W. B. ; Derakhshandeh, J. ; Wien, W. H. A. ; Milosavljevic, S. ; Nanver, L. K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c354t-d414f2523fe772f7300ca0ad163353e705fd168e5f11b89019c0719ecb3ee7a43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>Applied sciences</topic><topic>Backscattered electrons (BSEs)</topic><topic>Boron</topic><topic>boron layer</topic><topic>Capacitance</topic><topic>Current measurement</topic><topic>Detectors</topic><topic>Diodes</topic><topic>electron detector</topic><topic>Electron energy</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>General equipment and techniques</topic><topic>Imaging</topic><topic>Instruments, apparatus, components and techniques common to several branches of physics and astronomy</topic><topic>low-energy electrons</topic><topic>Optoelectronic devices</topic><topic>Photodiode detectors</topic><topic>Photodiodes</topic><topic>Physics</topic><topic>Scanning electron microscopy</topic><topic>Scanning probe microscopes, components and techniques</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing</topic><topic>Silicon</topic><topic>silicon epitaxy</topic><topic>silicon photodiode</topic><topic>Surface treatment</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sakic, A.</creatorcontrib><creatorcontrib>van Veen, G.</creatorcontrib><creatorcontrib>Kooijman, K.</creatorcontrib><creatorcontrib>Vogelsang, P.</creatorcontrib><creatorcontrib>Scholtes, T. L. M.</creatorcontrib><creatorcontrib>de Boer, W. B.</creatorcontrib><creatorcontrib>Derakhshandeh, J.</creatorcontrib><creatorcontrib>Wien, W. H. A.</creatorcontrib><creatorcontrib>Milosavljevic, S.</creatorcontrib><creatorcontrib>Nanver, L. K.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Sakic, A.</au><au>van Veen, G.</au><au>Kooijman, K.</au><au>Vogelsang, P.</au><au>Scholtes, T. L. M.</au><au>de Boer, W. B.</au><au>Derakhshandeh, J.</au><au>Wien, W. H. A.</au><au>Milosavljevic, S.</au><au>Nanver, L. K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Efficiency Silicon Photodiode Detector for Sub-keV Electron Microscopy</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2012-10-01</date><risdate>2012</risdate><volume>59</volume><issue>10</issue><spage>2707</spage><epage>2714</epage><pages>2707-2714</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>A silicon photodiode detector is presented for use in scanning electron microscopy (SEM). Enhanced imaging capabilities are achieved for sub-keV electron energy values by employing a pure boron (PureB) layer photodiode technology to deposit nanometer-thin photosensitive anodes. As a result, imaging using backscattered electrons is demonstrated for 50-eV electron landing energy values. The detector is built up of several closely packed photodiodes, and to obtain high scanning speed, each photodiode is engineered with low series resistance and low capacitance values. The low capacitance (<; 3 pF/mm 2 ) is facilitated by thick, almost intrinsically-doped epitaxial layers grown to achieve the necessarily wide depletion regions. For the low series resistance, diode metallization has been patterned into a conductive grid directly on top of the nanometer-thin PureB-layer front-entrance window. Finally, a through-wafer aperture in the middle of the detector is micromachined for flexible positioning in the SEM system.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2012.2207960</doi><tpages>8</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2707-2714 |
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| subjects | Applied sciences Backscattered electrons (BSEs) Boron boron layer Capacitance Current measurement Detectors Diodes electron detector Electron energy Electronics Exact sciences and technology General equipment and techniques Imaging Instruments, apparatus, components and techniques common to several branches of physics and astronomy low-energy electrons Optoelectronic devices Photodiode detectors Photodiodes Physics Scanning electron microscopy Scanning probe microscopes, components and techniques Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing Silicon silicon epitaxy silicon photodiode Surface treatment |
| title | High-Efficiency Silicon Photodiode Detector for Sub-keV Electron Microscopy |
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