High-Efficiency Silicon Photodiode Detector for Sub-keV Electron Microscopy

A silicon photodiode detector is presented for use in scanning electron microscopy (SEM). Enhanced imaging capabilities are achieved for sub-keV electron energy values by employing a pure boron (PureB) layer photodiode technology to deposit nanometer-thin photosensitive anodes. As a result, imaging...

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Veröffentlicht in:	IEEE transactions on electron devices 2012-10, Vol.59 (10), p.2707-2714
Hauptverfasser:	Sakic, A., van Veen, G., Kooijman, K., Vogelsang, P., Scholtes, T. L. M., de Boer, W. B., Derakhshandeh, J., Wien, W. H. A., Milosavljevic, S., Nanver, L. K.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Backscattered electrons (BSEs) Boron boron layer Capacitance Current measurement Detectors Diodes electron detector Electron energy Electronics Exact sciences and technology General equipment and techniques Imaging Instruments, apparatus, components and techniques common to several branches of physics and astronomy low-energy electrons Optoelectronic devices Photodiode detectors Photodiodes Physics Scanning electron microscopy Scanning probe microscopes, components and techniques Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Sensors (chemical, optical, electrical, movement, gas, etc.) remote sensing Silicon silicon epitaxy silicon photodiode Surface treatment
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Beschreibung
Zusammenfassung:	A silicon photodiode detector is presented for use in scanning electron microscopy (SEM). Enhanced imaging capabilities are achieved for sub-keV electron energy values by employing a pure boron (PureB) layer photodiode technology to deposit nanometer-thin photosensitive anodes. As a result, imaging using backscattered electrons is demonstrated for 50-eV electron landing energy values. The detector is built up of several closely packed photodiodes, and to obtain high scanning speed, each photodiode is engineered with low series resistance and low capacitance values. The low capacitance (
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2012.2207960