A Degenerately Doped [Formula Omitted] Bipolar Junction Transistor

A Degenerately Doped [Formula Omitted] Bipolar Junction Transistor

An InGaAs bipolar junction transistor having degenerately doped base and emitter layers is reported. The high emitter efficiency is attributed to the asymmetry between the density of states of the conduction and valence bands. A high-frequency transistor having base and emitter metals simultaneously...

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Veröffentlicht in:IEEE electron device letters 2011-01, Vol.32 (1), p.21
Hauptverfasser: Yalon, E, Elias, D. Cohen, Gavrilov, A, Cohen, S, Halevy, R, Ritter, D
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Elias, D. Cohen
Gavrilov, A
Cohen, S
Halevy, R
Ritter, D
description An InGaAs bipolar junction transistor having degenerately doped base and emitter layers is reported. The high emitter efficiency is attributed to the asymmetry between the density of states of the conduction and valence bands. A high-frequency transistor having base and emitter metals simultaneously deposited on the emitter layer is demonstrated. The base contact backward diode resistance was 125 [Formula Omitted].
doi_str_mv 10.1109/LED.2010.2084557
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fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_1030196673</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2724362071</sourcerecordid><originalsourceid>FETCH-proquest_journals_10301966733</originalsourceid><addsrcrecordid>eNqNir0KwjAYAIMoWH92x4Bz9fuapLWjtYqI4OImUoKN0lKTmqSDb6-DD-B0HHeEzBAWiJAuj9t8EcHXIlhxIZIeCVCIVQgiZn0SQMIxZAjxkIycqwGQ84QHJFvTXD2UVlZ61bxpblpV0svO2GfXSHp6Vt6r8kqzqjWNtPTQ6ZuvjKZnK7WrnDd2QgZ32Tg1_XFM5rvtebMPW2tenXK-qE1n9TcVCAwwjeOEsf-uD6UfP-Q</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1030196673</pqid></control><display><type>article</type><title>A Degenerately Doped [Formula Omitted] Bipolar Junction Transistor</title><source>IEEE Electronic Library (IEL)</source><creator>Yalon, E ; Elias, D. Cohen ; Gavrilov, A ; Cohen, S ; Halevy, R ; Ritter, D</creator><creatorcontrib>Yalon, E ; Elias, D. Cohen ; Gavrilov, A ; Cohen, S ; Halevy, R ; Ritter, D</creatorcontrib><description>An InGaAs bipolar junction transistor having degenerately doped base and emitter layers is reported. The high emitter efficiency is attributed to the asymmetry between the density of states of the conduction and valence bands. A high-frequency transistor having base and emitter metals simultaneously deposited on the emitter layer is demonstrated. The base contact backward diode resistance was 125 [Formula Omitted].</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2010.2084557</identifier><language>eng</language><publisher>New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</publisher><ispartof>IEEE electron device letters, 2011-01, Vol.32 (1), p.21</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jan 2011</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Yalon, E</creatorcontrib><creatorcontrib>Elias, D. Cohen</creatorcontrib><creatorcontrib>Gavrilov, A</creatorcontrib><creatorcontrib>Cohen, S</creatorcontrib><creatorcontrib>Halevy, R</creatorcontrib><creatorcontrib>Ritter, D</creatorcontrib><title>A Degenerately Doped [Formula Omitted] Bipolar Junction Transistor</title><title>IEEE electron device letters</title><description>An InGaAs bipolar junction transistor having degenerately doped base and emitter layers is reported. The high emitter efficiency is attributed to the asymmetry between the density of states of the conduction and valence bands. A high-frequency transistor having base and emitter metals simultaneously deposited on the emitter layer is demonstrated. The base contact backward diode resistance was 125 [Formula Omitted].</description><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><recordid>eNqNir0KwjAYAIMoWH92x4Bz9fuapLWjtYqI4OImUoKN0lKTmqSDb6-DD-B0HHeEzBAWiJAuj9t8EcHXIlhxIZIeCVCIVQgiZn0SQMIxZAjxkIycqwGQ84QHJFvTXD2UVlZ61bxpblpV0svO2GfXSHp6Vt6r8kqzqjWNtPTQ6ZuvjKZnK7WrnDd2QgZ32Tg1_XFM5rvtebMPW2tenXK-qE1n9TcVCAwwjeOEsf-uD6UfP-Q</recordid><startdate>20110101</startdate><enddate>20110101</enddate><creator>Yalon, E</creator><creator>Elias, D. Cohen</creator><creator>Gavrilov, A</creator><creator>Cohen, S</creator><creator>Halevy, R</creator><creator>Ritter, D</creator><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20110101</creationdate><title>A Degenerately Doped [Formula Omitted] Bipolar Junction Transistor</title><author>Yalon, E ; Elias, D. Cohen ; Gavrilov, A ; Cohen, S ; Halevy, R ; Ritter, D</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_10301966733</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yalon, E</creatorcontrib><creatorcontrib>Elias, D. Cohen</creatorcontrib><creatorcontrib>Gavrilov, A</creatorcontrib><creatorcontrib>Cohen, S</creatorcontrib><creatorcontrib>Halevy, R</creatorcontrib><creatorcontrib>Ritter, D</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yalon, E</au><au>Elias, D. Cohen</au><au>Gavrilov, A</au><au>Cohen, S</au><au>Halevy, R</au><au>Ritter, D</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Degenerately Doped [Formula Omitted] Bipolar Junction Transistor</atitle><jtitle>IEEE electron device letters</jtitle><date>2011-01-01</date><risdate>2011</risdate><volume>32</volume><issue>1</issue><spage>21</spage><pages>21-</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><abstract>An InGaAs bipolar junction transistor having degenerately doped base and emitter layers is reported. The high emitter efficiency is attributed to the asymmetry between the density of states of the conduction and valence bands. A high-frequency transistor having base and emitter metals simultaneously deposited on the emitter layer is demonstrated. The base contact backward diode resistance was 125 [Formula Omitted].</abstract><cop>New York</cop><pub>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</pub><doi>10.1109/LED.2010.2084557</doi></addata></record>
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title A Degenerately Doped [Formula Omitted] Bipolar Junction Transistor
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T11%3A27%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20Degenerately%20Doped%20%5BFormula%20Omitted%5D%20Bipolar%20Junction%20Transistor&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Yalon,%20E&rft.date=2011-01-01&rft.volume=32&rft.issue=1&rft.spage=21&rft.pages=21-&rft.issn=0741-3106&rft.eissn=1558-0563&rft_id=info:doi/10.1109/LED.2010.2084557&rft_dat=%3Cproquest%3E2724362071%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1030196673&rft_id=info:pmid/&rfr_iscdi=true