A Degenerately Doped [Formula Omitted] Bipolar Junction Transistor

A Degenerately Doped [Formula Omitted] Bipolar Junction Transistor

An InGaAs bipolar junction transistor having degenerately doped base and emitter layers is reported. The high emitter efficiency is attributed to the asymmetry between the density of states of the conduction and valence bands. A high-frequency transistor having base and emitter metals simultaneously...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2011-01, Vol.32 (1), p.21
Hauptverfasser: Yalon, E, Elias, D. Cohen, Gavrilov, A, Cohen, S, Halevy, R, Ritter, D
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:An InGaAs bipolar junction transistor having degenerately doped base and emitter layers is reported. The high emitter efficiency is attributed to the asymmetry between the density of states of the conduction and valence bands. A high-frequency transistor having base and emitter metals simultaneously deposited on the emitter layer is demonstrated. The base contact backward diode resistance was 125 [Formula Omitted].
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2084557