High-Performance and Stable Transparent Hf-In-Zn-O Thin-Film Transistors With a Double-Etch-Stopper Layer
Transparent hafnium indium zinc oxide thin-film transistors adopting single- and double-etch-stopper layers were evaluated. Compared to devices with a single SiO x etch stopper (ES) grown at 150°C, a double ES with a second SiO x film grown at 350°C provides a superior device performance such as imp...
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Veröffentlicht in: | IEEE electron device letters 2010-11, Vol.31 (11), p.1248-1250 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Transparent hafnium indium zinc oxide thin-film transistors adopting single- and double-etch-stopper layers were evaluated. Compared to devices with a single SiO x etch stopper (ES) grown at 150°C, a double ES with a second SiO x film grown at 350°C provides a superior device performance such as improved subthreshold swing, threshold voltage, field effect mobility, and higher stability under a negative bias stress. The stretched-exponential analyses of the bias stress results indicate that the denser high-temperature SiO x protects more effectively the underlying semiconductor during the source/drain etch process and suppresses the generation of defect states therein. |
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ISSN: | 0741-3106 1558-0563 |
DOI: | 10.1109/LED.2010.2065793 |