High-Performance [Formula Omitted] nMOSFETs With Source/Drain Junctions Formed by Gas-Phase Doping

We reveal that the MOVPE-based gas-phase doping can yield lower arsenic diffusion constant and lower leakage current [Formula Omitted] junctions in Ge compared with conventional ion-implantation doping. Thus, the gas-phase doping is quite effective for realizing high-performance Ge n-channel MOSFETs. By using gas-phase doping for source/drain junction formation, the (100) [Formula Omitted] nMOSFETs have achieved high electron mobility of 1020 [Formula Omitted] while maintaining low junction leakage current and high [Formula Omitted] ratio of [Formula Omitted]. Furthermore, the (110) [Formula Omitted] nMOSFETs have also shown high electron mobility and high [Formula Omitted] ratio.