205-GHz (Al,In)N/GaN HEMTs
We report 55-nm gate AlInN/GaN high-electron-mobility transistors (HEMTs) featuring a short-circuit current gain cutoff frequency of fT = 205 GHz at room temperature, a new record for GaN-based HEMTs. The devices source a maximum current density of 2.3 A/mm at V GS = 0 V and show a measured transcon...
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 2010-09, Vol.31 (9), p.957-959 |
|---|---|
| Hauptverfasser: | , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 959 |
|---|---|
| container_issue | 9 |
| container_start_page | 957 |
| container_title | IEEE electron device letters |
| container_volume | 31 |
| creator | Haifeng Sun Alt, A R Benedickter, H Feltin, E Carlin, J.-F Gonschorek, M Grandjean, N R Bolognesi, C R |
| description | We report 55-nm gate AlInN/GaN high-electron-mobility transistors (HEMTs) featuring a short-circuit current gain cutoff frequency of fT = 205 GHz at room temperature, a new record for GaN-based HEMTs. The devices source a maximum current density of 2.3 A/mm at V GS = 0 V and show a measured transconductance of 575 mS/mm, which is the highest value reported to date for nonrecessed gate nitride HEMTs. Comparison to state-of-the-art thin-barrier AlGaN/GaN HEMTs suggests that AlInN/GaN devices benefit from an advantageous channel velocity under high-field transport conditions. |
| doi_str_mv | 10.1109/LED.2010.2055826 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_1029010371</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5545347</ieee_id><sourcerecordid>787201601</sourcerecordid><originalsourceid>FETCH-LOGICAL-c353t-60065a5a085d0f3fde21d267022a50045c3eee41813a383f6d84ad5221f1cbbd3</originalsourceid><addsrcrecordid>eNpdkM1PwkAQxTdGExG9G72QGKMmFmZ29qMcCSKQIF7wvFnabVJSWuzSg_71bgPh4GlmMr95mfcYu0XoI8JwsJi89TmEiYOUMVdnrIOhiUAqOmcd0AIjQlCX7Mr7DQAKoUWH3QU8ms5-e8-j4nVeviwHU7vszSYfK3_NLjJbeHdzrF329T5ZjWfR4nM6H48WUUKS9pECUNJKC7FMIaMsdRxTrjRwbiWAkAk55wTGSJZiylQaC5tKzjHDZL1OqcueDrq7uvpunN-bbe4TVxS2dFXjjY51MKYAA_nwj9xUTV2G5wwCHwb3pFsKDlRSV97XLjO7Ot_a-idAps3KhKxMm5U5ZhVOHo_C1ie2yGpbJrk_3XHiSCBb6fsDlwdLp7WUQpLQ9AexvmtI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1029010371</pqid></control><display><type>article</type><title>205-GHz (Al,In)N/GaN HEMTs</title><source>IEEE Electronic Library (IEL)</source><creator>Haifeng Sun ; Alt, A R ; Benedickter, H ; Feltin, E ; Carlin, J.-F ; Gonschorek, M ; Grandjean, N R ; Bolognesi, C R</creator><creatorcontrib>Haifeng Sun ; Alt, A R ; Benedickter, H ; Feltin, E ; Carlin, J.-F ; Gonschorek, M ; Grandjean, N R ; Bolognesi, C R</creatorcontrib><description>We report 55-nm gate AlInN/GaN high-electron-mobility transistors (HEMTs) featuring a short-circuit current gain cutoff frequency of fT = 205 GHz at room temperature, a new record for GaN-based HEMTs. The devices source a maximum current density of 2.3 A/mm at V GS = 0 V and show a measured transconductance of 575 mS/mm, which is the highest value reported to date for nonrecessed gate nitride HEMTs. Comparison to state-of-the-art thin-barrier AlGaN/GaN HEMTs suggests that AlInN/GaN devices benefit from an advantageous channel velocity under high-field transport conditions.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2010.2055826</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>AlInN/GaN ; Aluminum gallium nitride ; Applied sciences ; Channels ; Current density ; Current measurement ; Cutoff frequency ; Density measurement ; Devices ; Electronics ; Exact sciences and technology ; Gain ; Gallium nitride ; Gallium nitrides ; Gates ; HEMTs ; High electron mobility transistors ; high-electron-mobility transistor (HEMT) ; Microwave and submillimeter wave devices, electron transfer devices ; millimeter-wave transistors ; MODFETs ; Semiconductor devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; State of the art ; Temperature ; Transconductance ; Transistors ; Transport</subject><ispartof>IEEE electron device letters, 2010-09, Vol.31 (9), p.957-959</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Sep 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c353t-60065a5a085d0f3fde21d267022a50045c3eee41813a383f6d84ad5221f1cbbd3</citedby><cites>FETCH-LOGICAL-c353t-60065a5a085d0f3fde21d267022a50045c3eee41813a383f6d84ad5221f1cbbd3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5545347$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5545347$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23213051$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Haifeng Sun</creatorcontrib><creatorcontrib>Alt, A R</creatorcontrib><creatorcontrib>Benedickter, H</creatorcontrib><creatorcontrib>Feltin, E</creatorcontrib><creatorcontrib>Carlin, J.-F</creatorcontrib><creatorcontrib>Gonschorek, M</creatorcontrib><creatorcontrib>Grandjean, N R</creatorcontrib><creatorcontrib>Bolognesi, C R</creatorcontrib><title>205-GHz (Al,In)N/GaN HEMTs</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>We report 55-nm gate AlInN/GaN high-electron-mobility transistors (HEMTs) featuring a short-circuit current gain cutoff frequency of fT = 205 GHz at room temperature, a new record for GaN-based HEMTs. The devices source a maximum current density of 2.3 A/mm at V GS = 0 V and show a measured transconductance of 575 mS/mm, which is the highest value reported to date for nonrecessed gate nitride HEMTs. Comparison to state-of-the-art thin-barrier AlGaN/GaN HEMTs suggests that AlInN/GaN devices benefit from an advantageous channel velocity under high-field transport conditions.</description><subject>AlInN/GaN</subject><subject>Aluminum gallium nitride</subject><subject>Applied sciences</subject><subject>Channels</subject><subject>Current density</subject><subject>Current measurement</subject><subject>Cutoff frequency</subject><subject>Density measurement</subject><subject>Devices</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gain</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>Gates</subject><subject>HEMTs</subject><subject>High electron mobility transistors</subject><subject>high-electron-mobility transistor (HEMT)</subject><subject>Microwave and submillimeter wave devices, electron transfer devices</subject><subject>millimeter-wave transistors</subject><subject>MODFETs</subject><subject>Semiconductor devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>State of the art</subject><subject>Temperature</subject><subject>Transconductance</subject><subject>Transistors</subject><subject>Transport</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkM1PwkAQxTdGExG9G72QGKMmFmZ29qMcCSKQIF7wvFnabVJSWuzSg_71bgPh4GlmMr95mfcYu0XoI8JwsJi89TmEiYOUMVdnrIOhiUAqOmcd0AIjQlCX7Mr7DQAKoUWH3QU8ms5-e8-j4nVeviwHU7vszSYfK3_NLjJbeHdzrF329T5ZjWfR4nM6H48WUUKS9pECUNJKC7FMIaMsdRxTrjRwbiWAkAk55wTGSJZiylQaC5tKzjHDZL1OqcueDrq7uvpunN-bbe4TVxS2dFXjjY51MKYAA_nwj9xUTV2G5wwCHwb3pFsKDlRSV97XLjO7Ot_a-idAps3KhKxMm5U5ZhVOHo_C1ie2yGpbJrk_3XHiSCBb6fsDlwdLp7WUQpLQ9AexvmtI</recordid><startdate>20100901</startdate><enddate>20100901</enddate><creator>Haifeng Sun</creator><creator>Alt, A R</creator><creator>Benedickter, H</creator><creator>Feltin, E</creator><creator>Carlin, J.-F</creator><creator>Gonschorek, M</creator><creator>Grandjean, N R</creator><creator>Bolognesi, C R</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7QQ</scope><scope>F28</scope><scope>FR3</scope><scope>JG9</scope></search><sort><creationdate>20100901</creationdate><title>205-GHz (Al,In)N/GaN HEMTs</title><author>Haifeng Sun ; Alt, A R ; Benedickter, H ; Feltin, E ; Carlin, J.-F ; Gonschorek, M ; Grandjean, N R ; Bolognesi, C R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c353t-60065a5a085d0f3fde21d267022a50045c3eee41813a383f6d84ad5221f1cbbd3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>AlInN/GaN</topic><topic>Aluminum gallium nitride</topic><topic>Applied sciences</topic><topic>Channels</topic><topic>Current density</topic><topic>Current measurement</topic><topic>Cutoff frequency</topic><topic>Density measurement</topic><topic>Devices</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gain</topic><topic>Gallium nitride</topic><topic>Gallium nitrides</topic><topic>Gates</topic><topic>HEMTs</topic><topic>High electron mobility transistors</topic><topic>high-electron-mobility transistor (HEMT)</topic><topic>Microwave and submillimeter wave devices, electron transfer devices</topic><topic>millimeter-wave transistors</topic><topic>MODFETs</topic><topic>Semiconductor devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>State of the art</topic><topic>Temperature</topic><topic>Transconductance</topic><topic>Transistors</topic><topic>Transport</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Haifeng Sun</creatorcontrib><creatorcontrib>Alt, A R</creatorcontrib><creatorcontrib>Benedickter, H</creatorcontrib><creatorcontrib>Feltin, E</creatorcontrib><creatorcontrib>Carlin, J.-F</creatorcontrib><creatorcontrib>Gonschorek, M</creatorcontrib><creatorcontrib>Grandjean, N R</creatorcontrib><creatorcontrib>Bolognesi, C R</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Ceramic Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Haifeng Sun</au><au>Alt, A R</au><au>Benedickter, H</au><au>Feltin, E</au><au>Carlin, J.-F</au><au>Gonschorek, M</au><au>Grandjean, N R</au><au>Bolognesi, C R</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>205-GHz (Al,In)N/GaN HEMTs</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2010-09-01</date><risdate>2010</risdate><volume>31</volume><issue>9</issue><spage>957</spage><epage>959</epage><pages>957-959</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We report 55-nm gate AlInN/GaN high-electron-mobility transistors (HEMTs) featuring a short-circuit current gain cutoff frequency of fT = 205 GHz at room temperature, a new record for GaN-based HEMTs. The devices source a maximum current density of 2.3 A/mm at V GS = 0 V and show a measured transconductance of 575 mS/mm, which is the highest value reported to date for nonrecessed gate nitride HEMTs. Comparison to state-of-the-art thin-barrier AlGaN/GaN HEMTs suggests that AlInN/GaN devices benefit from an advantageous channel velocity under high-field transport conditions.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2010.2055826</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2010-09, Vol.31 (9), p.957-959 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_journals_1029010371 |
| source | IEEE Electronic Library (IEL) |
| subjects | AlInN/GaN Aluminum gallium nitride Applied sciences Channels Current density Current measurement Cutoff frequency Density measurement Devices Electronics Exact sciences and technology Gain Gallium nitride Gallium nitrides Gates HEMTs High electron mobility transistors high-electron-mobility transistor (HEMT) Microwave and submillimeter wave devices, electron transfer devices millimeter-wave transistors MODFETs Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices State of the art Temperature Transconductance Transistors Transport |
| title | 205-GHz (Al,In)N/GaN HEMTs |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T08%3A37%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=205-GHz%20(Al,In)N/GaN%20HEMTs&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Haifeng%20Sun&rft.date=2010-09-01&rft.volume=31&rft.issue=9&rft.spage=957&rft.epage=959&rft.pages=957-959&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2010.2055826&rft_dat=%3Cproquest_RIE%3E787201601%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1029010371&rft_id=info:pmid/&rft_ieee_id=5545347&rfr_iscdi=true |