205-GHz (Al,In)N/GaN HEMTs

We report 55-nm gate AlInN/GaN high-electron-mobility transistors (HEMTs) featuring a short-circuit current gain cutoff frequency of fT = 205 GHz at room temperature, a new record for GaN-based HEMTs. The devices source a maximum current density of 2.3 A/mm at V GS = 0 V and show a measured transcon...

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Veröffentlicht in:	IEEE electron device letters 2010-09, Vol.31 (9), p.957-959
Hauptverfasser:	Haifeng Sun, Alt, A R, Benedickter, H, Feltin, E, Carlin, J.-F, Gonschorek, M, Grandjean, N R, Bolognesi, C R
Format:	Artikel
Sprache:	eng
Schlagworte:	AlInN/GaN Aluminum gallium nitride Applied sciences Channels Current density Current measurement Cutoff frequency Density measurement Devices Electronics Exact sciences and technology Gain Gallium nitride Gallium nitrides Gates HEMTs High electron mobility transistors high-electron-mobility transistor (HEMT) Microwave and submillimeter wave devices, electron transfer devices millimeter-wave transistors MODFETs Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices State of the art Temperature Transconductance Transistors Transport
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Zusammenfassung:	We report 55-nm gate AlInN/GaN high-electron-mobility transistors (HEMTs) featuring a short-circuit current gain cutoff frequency of fT = 205 GHz at room temperature, a new record for GaN-based HEMTs. The devices source a maximum current density of 2.3 A/mm at V GS = 0 V and show a measured transconductance of 575 mS/mm, which is the highest value reported to date for nonrecessed gate nitride HEMTs. Comparison to state-of-the-art thin-barrier AlGaN/GaN HEMTs suggests that AlInN/GaN devices benefit from an advantageous channel velocity under high-field transport conditions.
ISSN:	0741-3106 1558-0563
DOI:	10.1109/LED.2010.2055826