High On/Off-Current Ratio in Bottom-Gated Microcrystalline-Silicon Thin-Film Transistors With Vertical-Offset Structure

High On/Off-Current Ratio in Bottom-Gated Microcrystalline-Silicon Thin-Film Transistors With Vertical-Offset Structure

The high on/off-current ratio of microcrystalline-silicon thin-film transistors (TFTs) with vertical offset was demonstrated. These TFTs have a bottom-gate structure and offset regions formed along the side surfaces of the thick interlayer films. Due to a decrease of maximum electric-field intensity...

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Veröffentlicht in:IEEE electron device letters 2010-09, Vol.31 (9), p.975-977
Hauptverfasser: Toyota, Yoshiaki, Matsumura, Mieko, Suzumura, Isao, Kaitoh, Takuo, Gotoh, Jun, Ohkura, Makoto
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Bottom gate
Crystallization
Devices
Displays
Electric fields
Electrodes
Electron mobility
Electronics
Exact sciences and technology
Fabrication
Interlayers
Laminates
microcrystalline silicon (\mu\hbox{c-Si})
off current
Offsets
on/off-current ratio
Plasma temperature
Poole-Frenkel (PF)
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon compounds
Thick films
Thin film devices
Thin film transistors
Transistors
vertical offset
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Beschreibung
Zusammenfassung:The high on/off-current ratio of microcrystalline-silicon thin-film transistors (TFTs) with vertical offset was demonstrated. These TFTs have a bottom-gate structure and offset regions formed along the side surfaces of the thick interlayer films. Due to a decrease of maximum electric-field intensity and a narrow distribution of high electric field, the on/off current ratio of vertical-offset TFTs is about three orders of magnitude higher than that of conventional TFTs.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2055533