Experimental Assessment of Electrons and Holes in Erase Transient of TANOS and TANVaS Memories
We present carrier separation experiments based on direct charge measurement to assess the contributions of electrons and holes to the erase transient of TANOS-like nonvolatile memories. The role of different carrier species is analyzed as a function of erase voltage and charge configuration at the...
Gespeichert in:
| Veröffentlicht in: | IEEE electron device letters 2010-09, Vol.31 (9), p.936-938 |
|---|---|
| Hauptverfasser: | , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 938 |
|---|---|
| container_issue | 9 |
| container_start_page | 936 |
| container_title | IEEE electron device letters |
| container_volume | 31 |
| creator | Suhane, Amit Arreghini, Antonio Van den bosch, Geert Vandelli, Luca Padovani, Andrea Breuil, Laurent Larcher, Luca De Meyer, Kristin Van Houdt, Jan |
| description | We present carrier separation experiments based on direct charge measurement to assess the contributions of electrons and holes to the erase transient of TANOS-like nonvolatile memories. The role of different carrier species is analyzed as a function of erase voltage and charge configuration at the initial programmed state. We extend the analysis to band-engineered tunneling barriers, demonstrating that the performance improvement in these devices lies more on the enhancement of hole current rather than that of the electron one. |
| doi_str_mv | 10.1109/LED.2010.2055824 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_journals_1029009913</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>5523881</ieee_id><sourcerecordid>787201182</sourcerecordid><originalsourceid>FETCH-LOGICAL-c353t-81e30d33c03ea20d888b092844aedc6b511e59e3af8cd2cbdbba16c8c8b25b613</originalsourceid><addsrcrecordid>eNpdkE1Lw0AQhhdRsH7cBS8LIp6iM7vZdHMsGj-g6sHq0bDZTCCSJnWnBf33bm3x4GneYZ4ZhkeIE4RLRMivpsXNpYLYKTDGqnRHjDCGBEymd8UIxikmGiHbFwfMHwCYpuN0JN6LrwWFdk790nVywkzM60YOjSw68ssw9CxdX8v7oSOWbS-L4JjkLLie2y05mzw9v_xSMb25F_lI8yG0xEdir3Ed0_G2HorX22J2fZ9Mn-8erifTxGujl4lF0lBr7UGTU1BbayvIlU1TR7XPKoNIJiftGutr5au6qhxm3npbKVNlqA_FxebuIgyfK-JlOW_ZU9e5noYVl2M7jnLQqkie_SM_hlXo43MlgsoB8hx1pGBD-TAwB2rKRZTkwneEyrXvMvou177Lre-4cr497Ni7rol-fMt_e0or1JCuudMN1xLR39gYpa1F_QPrYoc3</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1029009913</pqid></control><display><type>article</type><title>Experimental Assessment of Electrons and Holes in Erase Transient of TANOS and TANVaS Memories</title><source>IEEE Electronic Library (IEL)</source><creator>Suhane, Amit ; Arreghini, Antonio ; Van den bosch, Geert ; Vandelli, Luca ; Padovani, Andrea ; Breuil, Laurent ; Larcher, Luca ; De Meyer, Kristin ; Van Houdt, Jan</creator><creatorcontrib>Suhane, Amit ; Arreghini, Antonio ; Van den bosch, Geert ; Vandelli, Luca ; Padovani, Andrea ; Breuil, Laurent ; Larcher, Luca ; De Meyer, Kristin ; Van Houdt, Jan</creatorcontrib><description>We present carrier separation experiments based on direct charge measurement to assess the contributions of electrons and holes to the erase transient of TANOS-like nonvolatile memories. The role of different carrier species is analyzed as a function of erase voltage and charge configuration at the initial programmed state. We extend the analysis to band-engineered tunneling barriers, demonstrating that the performance improvement in these devices lies more on the enhancement of hole current rather than that of the electron one.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2010.2055824</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Assessments ; Barriers ; Carrier separation ; Carriers ; Charge ; Charge carrier processes ; Charge measurement ; Current carriers ; Current measurement ; Design. Technologies. Operation analysis. Testing ; Devices ; Electric potential ; Electronics ; erase transient ; Exact sciences and technology ; Flash memory ; Integrated circuits ; Integrated circuits by function (including memories and processors) ; Nonvolatile memory ; Performance analysis ; Quantum computing ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Separation ; SONOS devices ; TANOS ; TANVaS ; Tunneling ; VariOT ; Voltage</subject><ispartof>IEEE electron device letters, 2010-09, Vol.31 (9), p.936-938</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Sep 2010</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c353t-81e30d33c03ea20d888b092844aedc6b511e59e3af8cd2cbdbba16c8c8b25b613</citedby><cites>FETCH-LOGICAL-c353t-81e30d33c03ea20d888b092844aedc6b511e59e3af8cd2cbdbba16c8c8b25b613</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/5523881$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27923,27924,54757</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/5523881$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=23213044$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Suhane, Amit</creatorcontrib><creatorcontrib>Arreghini, Antonio</creatorcontrib><creatorcontrib>Van den bosch, Geert</creatorcontrib><creatorcontrib>Vandelli, Luca</creatorcontrib><creatorcontrib>Padovani, Andrea</creatorcontrib><creatorcontrib>Breuil, Laurent</creatorcontrib><creatorcontrib>Larcher, Luca</creatorcontrib><creatorcontrib>De Meyer, Kristin</creatorcontrib><creatorcontrib>Van Houdt, Jan</creatorcontrib><title>Experimental Assessment of Electrons and Holes in Erase Transient of TANOS and TANVaS Memories</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>We present carrier separation experiments based on direct charge measurement to assess the contributions of electrons and holes to the erase transient of TANOS-like nonvolatile memories. The role of different carrier species is analyzed as a function of erase voltage and charge configuration at the initial programmed state. We extend the analysis to band-engineered tunneling barriers, demonstrating that the performance improvement in these devices lies more on the enhancement of hole current rather than that of the electron one.</description><subject>Applied sciences</subject><subject>Assessments</subject><subject>Barriers</subject><subject>Carrier separation</subject><subject>Carriers</subject><subject>Charge</subject><subject>Charge carrier processes</subject><subject>Charge measurement</subject><subject>Current carriers</subject><subject>Current measurement</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Devices</subject><subject>Electric potential</subject><subject>Electronics</subject><subject>erase transient</subject><subject>Exact sciences and technology</subject><subject>Flash memory</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>Nonvolatile memory</subject><subject>Performance analysis</subject><subject>Quantum computing</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Separation</subject><subject>SONOS devices</subject><subject>TANOS</subject><subject>TANVaS</subject><subject>Tunneling</subject><subject>VariOT</subject><subject>Voltage</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2010</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1Lw0AQhhdRsH7cBS8LIp6iM7vZdHMsGj-g6sHq0bDZTCCSJnWnBf33bm3x4GneYZ4ZhkeIE4RLRMivpsXNpYLYKTDGqnRHjDCGBEymd8UIxikmGiHbFwfMHwCYpuN0JN6LrwWFdk790nVywkzM60YOjSw68ssw9CxdX8v7oSOWbS-L4JjkLLie2y05mzw9v_xSMb25F_lI8yG0xEdir3Ed0_G2HorX22J2fZ9Mn-8erifTxGujl4lF0lBr7UGTU1BbayvIlU1TR7XPKoNIJiftGutr5au6qhxm3npbKVNlqA_FxebuIgyfK-JlOW_ZU9e5noYVl2M7jnLQqkie_SM_hlXo43MlgsoB8hx1pGBD-TAwB2rKRZTkwneEyrXvMvou177Lre-4cr497Ni7rol-fMt_e0or1JCuudMN1xLR39gYpa1F_QPrYoc3</recordid><startdate>20100901</startdate><enddate>20100901</enddate><creator>Suhane, Amit</creator><creator>Arreghini, Antonio</creator><creator>Van den bosch, Geert</creator><creator>Vandelli, Luca</creator><creator>Padovani, Andrea</creator><creator>Breuil, Laurent</creator><creator>Larcher, Luca</creator><creator>De Meyer, Kristin</creator><creator>Van Houdt, Jan</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20100901</creationdate><title>Experimental Assessment of Electrons and Holes in Erase Transient of TANOS and TANVaS Memories</title><author>Suhane, Amit ; Arreghini, Antonio ; Van den bosch, Geert ; Vandelli, Luca ; Padovani, Andrea ; Breuil, Laurent ; Larcher, Luca ; De Meyer, Kristin ; Van Houdt, Jan</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c353t-81e30d33c03ea20d888b092844aedc6b511e59e3af8cd2cbdbba16c8c8b25b613</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2010</creationdate><topic>Applied sciences</topic><topic>Assessments</topic><topic>Barriers</topic><topic>Carrier separation</topic><topic>Carriers</topic><topic>Charge</topic><topic>Charge carrier processes</topic><topic>Charge measurement</topic><topic>Current carriers</topic><topic>Current measurement</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Devices</topic><topic>Electric potential</topic><topic>Electronics</topic><topic>erase transient</topic><topic>Exact sciences and technology</topic><topic>Flash memory</topic><topic>Integrated circuits</topic><topic>Integrated circuits by function (including memories and processors)</topic><topic>Nonvolatile memory</topic><topic>Performance analysis</topic><topic>Quantum computing</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Separation</topic><topic>SONOS devices</topic><topic>TANOS</topic><topic>TANVaS</topic><topic>Tunneling</topic><topic>VariOT</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Suhane, Amit</creatorcontrib><creatorcontrib>Arreghini, Antonio</creatorcontrib><creatorcontrib>Van den bosch, Geert</creatorcontrib><creatorcontrib>Vandelli, Luca</creatorcontrib><creatorcontrib>Padovani, Andrea</creatorcontrib><creatorcontrib>Breuil, Laurent</creatorcontrib><creatorcontrib>Larcher, Luca</creatorcontrib><creatorcontrib>De Meyer, Kristin</creatorcontrib><creatorcontrib>Van Houdt, Jan</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Suhane, Amit</au><au>Arreghini, Antonio</au><au>Van den bosch, Geert</au><au>Vandelli, Luca</au><au>Padovani, Andrea</au><au>Breuil, Laurent</au><au>Larcher, Luca</au><au>De Meyer, Kristin</au><au>Van Houdt, Jan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Experimental Assessment of Electrons and Holes in Erase Transient of TANOS and TANVaS Memories</atitle><jtitle>IEEE electron device letters</jtitle><stitle>LED</stitle><date>2010-09-01</date><risdate>2010</risdate><volume>31</volume><issue>9</issue><spage>936</spage><epage>938</epage><pages>936-938</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><coden>EDLEDZ</coden><abstract>We present carrier separation experiments based on direct charge measurement to assess the contributions of electrons and holes to the erase transient of TANOS-like nonvolatile memories. The role of different carrier species is analyzed as a function of erase voltage and charge configuration at the initial programmed state. We extend the analysis to band-engineered tunneling barriers, demonstrating that the performance improvement in these devices lies more on the enhancement of hole current rather than that of the electron one.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LED.2010.2055824</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0741-3106 |
| ispartof | IEEE electron device letters, 2010-09, Vol.31 (9), p.936-938 |
| issn | 0741-3106 1558-0563 |
| language | eng |
| recordid | cdi_proquest_journals_1029009913 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Assessments Barriers Carrier separation Carriers Charge Charge carrier processes Charge measurement Current carriers Current measurement Design. Technologies. Operation analysis. Testing Devices Electric potential Electronics erase transient Exact sciences and technology Flash memory Integrated circuits Integrated circuits by function (including memories and processors) Nonvolatile memory Performance analysis Quantum computing Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Separation SONOS devices TANOS TANVaS Tunneling VariOT Voltage |
| title | Experimental Assessment of Electrons and Holes in Erase Transient of TANOS and TANVaS Memories |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T13%3A19%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Experimental%20Assessment%20of%20Electrons%20and%20Holes%20in%20Erase%20Transient%20of%20TANOS%20and%20TANVaS%20Memories&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Suhane,%20Amit&rft.date=2010-09-01&rft.volume=31&rft.issue=9&rft.spage=936&rft.epage=938&rft.pages=936-938&rft.issn=0741-3106&rft.eissn=1558-0563&rft.coden=EDLEDZ&rft_id=info:doi/10.1109/LED.2010.2055824&rft_dat=%3Cproquest_RIE%3E787201182%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1029009913&rft_id=info:pmid/&rft_ieee_id=5523881&rfr_iscdi=true |