Experimental Assessment of Electrons and Holes in Erase Transient of TANOS and TANVaS Memories

Experimental Assessment of Electrons and Holes in Erase Transient of TANOS and TANVaS Memories

We present carrier separation experiments based on direct charge measurement to assess the contributions of electrons and holes to the erase transient of TANOS-like nonvolatile memories. The role of different carrier species is analyzed as a function of erase voltage and charge configuration at the...

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Veröffentlicht in:IEEE electron device letters 2010-09, Vol.31 (9), p.936-938
Hauptverfasser: Suhane, Amit, Arreghini, Antonio, Van den bosch, Geert, Vandelli, Luca, Padovani, Andrea, Breuil, Laurent, Larcher, Luca, De Meyer, Kristin, Van Houdt, Jan
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Assessments
Barriers
Carrier separation
Carriers
Charge
Charge carrier processes
Charge measurement
Current carriers
Current measurement
Design. Technologies. Operation analysis. Testing
Devices
Electric potential
Electronics
erase transient
Exact sciences and technology
Flash memory
Integrated circuits
Integrated circuits by function (including memories and processors)
Nonvolatile memory
Performance analysis
Quantum computing
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Separation
SONOS devices
TANOS
TANVaS
Tunneling
VariOT
Voltage
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Beschreibung
Zusammenfassung:We present carrier separation experiments based on direct charge measurement to assess the contributions of electrons and holes to the erase transient of TANOS-like nonvolatile memories. The role of different carrier species is analyzed as a function of erase voltage and charge configuration at the initial programmed state. We extend the analysis to band-engineered tunneling barriers, demonstrating that the performance improvement in these devices lies more on the enhancement of hole current rather than that of the electron one.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2010.2055824