High-Reliability Dynamic-Threshold Source-Side Injection for 2-Bit/Cell With MLC Operation of Wrapped Select-Gate SONOS in nor-Type Flash Memory

For the first time, a high-performance (τ PGM = 200 ns/τ ERS = 5 ms) cell with superior reliability characteristics is demonstrated in a nor-type architecture, using dynamic-threshold source-side injection (DTSSI) in a wrapped select-gate silicon-oxide-nitride-oxide-silicon memory device, with multi...

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Veröffentlicht in:	IEEE transactions on electron devices 2010-09, Vol.57 (9), p.2335-2338
Hauptverfasser:	Wang, Kuan-Ti, Chao, Tien-Sheng, Wu, Woei-Cherng, Yang, Wen-Luh, Lee, Chien-Hsing, Hsieh, Tsung-Min, Liou, Jhyy-Cheng, Wang, Shen-De, Chen, Tzu-Ping, Chen, Chien-Hung, Lin, Chih-Hung, Chen, Hwi-Huang
Format:	Artikel
Sprache:	eng
Schlagworte:	Charge carrier processes Computer architecture Flash memory Logic gates Microprocessors multilevel states in a cell (MLC) nor Reliability silicon-oxide-nitride-oxide-silicon (SONOS) SONOS devices
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