Highly Reliable Amorphous Silicon Gate Driver Using Stable Center-Offset Thin-Film Transistors

This paper reports a highly reliable hydrogenated amorphous silicon (a-Si:H) gate driver using center-offset thin-film transistors (TFTs). The a-Si:H TFTs with a center-offset structure are demonstrated to be highly reliable compared to a conventional a-Si:H TFT. The V th shift of center-offset a-Si...

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Veröffentlicht in:	IEEE transactions on electron devices 2010-09, Vol.57 (9), p.2330-2334
Hauptverfasser:	Choi, Jae Won, Kim, Jae Ik, Kim, Se Hwan, Jang, Jin
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous materials Amorphous silicon Applied sciences Circuit properties Circuit stability Design. Technologies. Operation analysis. Testing Digital circuits Driver circuits Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Integrated circuits Logic gates Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices shift registers Stress Thin film transistors thin-film transistors (TFTs) Transistors
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Beschreibung
Zusammenfassung:	This paper reports a highly reliable hydrogenated amorphous silicon (a-Si:H) gate driver using center-offset thin-film transistors (TFTs). The a-Si:H TFTs with a center-offset structure are demonstrated to be highly reliable compared to a conventional a-Si:H TFT. The V th shift of center-offset a-Si:H TFTs was found to be 35% less than that of the conventional a-Si:H TFT. Therefore, the center-offset a-Si:H TFTs are used as pull-down TFTs in the gate driver circuit. When the center-offset pull-down TFTs are used in the a-Si:H gate driver, the output off-state of the gate driver remains stable for periods longer than 3 × 10 8 s.
ISSN:	0018-9383 1557-9646
DOI:	10.1109/TED.2010.2054453