Improved Linearity for Low-Noise Applications in 0.25-[Formula Omitted] GaN MISHEMTs Using ALD [Formula Omitted] as Gate Dielectric

Improved device linearity for low-noise applications has been demonstrated in 0.25- [Formula Omitted] AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) using atomic-layer-deposited (ALD) [Formula Omitted] as gate dielectric. The measured dc transconductance, microwave small signal, and noise performance feature less dependence on drain current as compared to conventional Schottky-gate AlGaN/GaN HEMTs. Two-tone intermodulation measurement shows that the MISHEMT has a higher value of third-order intercept (IP3). The improved device linearity suggests that the ALD [Formula Omitted] MISHEMT on high-resistivity silicon substrate is promising for high-linearity low-noise amplifier applications.