Effective Surface Passivation by Novel [Formula Omitted]-[Formula Omitted] Treatment and BTI Characteristics on Interface-Engineered High-Mobility [Formula Omitted]-Gated Ge pMOSFETs

A novel surface passivation technique using silicon nitride (SN) by [Formula Omitted]-[Formula Omitted] treatment has been demonstrated on [Formula Omitted]-gated Ge pMOSFETs. It is found that ultrathin SN passivation is more effective to suppress the Ge out diffusion than ultrathin Si passivation. Improved interface quality and device performance were achieved for the device with the SN passivation. Fluorine (F) incorporation by postgate treatment was also implemented to further enhance the performance. Furthermore, bias temperature instability (BTI) characteristics were systematically investigated on interface engineered (Si-, SN-, or [Formula Omitted]-passivated) Ge pMOSFETs by both conventional dc [Formula Omitted]-[Formula Omitted] and fast pulse measurement. The impact of [Formula Omitted] thickness and postgate treatment processes (F incorporation) on BTI and device performance was also studied, and it is found that BTI and device performance can be improved by reducing the [Formula Omitted] thickness or incorporating F.