Validation of the Compatibility Between a Porous Silicon-Based Gas Sensor Technology and Standard Microelectronic Process
The compatibility of a recently proposed porous silicon formation procedure for gas sensor integration with a commercial microelectronic process is analyzed. Porous silicon-based gas sensors have been produced on a test chip by means of a post-processing approach that enables silicon anodization in...
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Veröffentlicht in: | IEEE sensors journal 2010-04, Vol.10 (4), p.893-899 |
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Hauptverfasser: | , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The compatibility of a recently proposed porous silicon formation procedure for gas sensor integration with a commercial microelectronic process is analyzed. Porous silicon-based gas sensors have been produced on a test chip by means of a post-processing approach that enables silicon anodization in selected areas. The effects of the post-processing procedure on electronic circuits, integrated on the test chip as the sensors, have been investigated by electrical measurements. Critical electrical parameters of purposely-designed high-performance analog cells have been measured on several post-processed and not post-processed samples. Experimental outcomes demonstrate the actual compatibility of the post-processing procedure for porous silicon formation with commercial microelectronic processes. |
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ISSN: | 1530-437X 1558-1748 |
DOI: | 10.1109/JSEN.2009.2034861 |