Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High [Formula Omitted]

This letter discusses the design of high-aspect-ratio T-gates on molecular beam epitaxy (MBE)-grown nitrogen-polar (N-polar) GaN/AlGaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) for high power-gain cutoff frequency [Formula Omitted]. A 351-GHz [Formula Omitted] is demonstrated, which is the highest published to date for an N-polar GaN HEMT. Novel 80-nm-long 1.1-[Formula Omitted]-tall T-gates with a 370-nm-tall stem were used to simultaneously minimize gate resistance [Formula Omitted] and parasitic gate-drain capacitance [Formula Omitted]. The device on -resistance [Formula Omitted] of 0.42 [Formula Omitted] was obtained by employing [Formula Omitted] GaN MBE-regrown ohmic contacts and by scaling the lateral separation between regrown source-drain regions to 250 nm. Within the design space explored, this letter experimentally demonstrates that [Formula Omitted] is increased by reducing the gate width and the T-gate top length.