GaInNAsSb for 1.3-1.6-[micro]m-long wavelength lasers grown by molecular beam epitaxy

GaInNAsSb for 1.3-1.6-[micro]m-long wavelength lasers grown by molecular beam epitaxy

High-efficiency optical emission past 1.3 μm of GaInNAs on GaAs, with an ultimate goal of a high-power 1.55-μm vertical-cavity surface-emitting laser (VCSEL), has proven to be elusive.

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Bibliographische Detailangaben
Veröffentlicht in:IEEE journal of selected topics in quantum electronics 2002-07, Vol.8 (4), p.795
Hauptverfasser: Gambin, V, Ha, Wonill, Wistey, M, Yuen, Homan, Bank, S.R, Kim, S.M, Harris, J.S
Format: Artikel
Sprache:eng
Schlagworte:
Lasers
Molecular beam epitaxy
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Beschreibung
Zusammenfassung:High-efficiency optical emission past 1.3 μm of GaInNAs on GaAs, with an ultimate goal of a high-power 1.55-μm vertical-cavity surface-emitting laser (VCSEL), has proven to be elusive.
ISSN:1077-260X
1558-4542
DOI:10.1109/JSTQE.2002.800843