Improving the RF performance of 0.18 [micro]m CMOS with deep n-well implantation

Improving the RF performance of 0.18 [micro]m CMOS with deep n-well implantation

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE electron device letters 2001-10, Vol.22 (10), p.481
Hauptverfasser: Su, Jiong-Guang, Hsu, Heng-Ming, Wong, Shyh-Chyi, Chang, Chun-Yen, Huang, Tiao-Yuan, Sun, Jack Yuan-Chen
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue 10
container_start_page 481
container_title IEEE electron device letters
container_volume 22
creator Su, Jiong-Guang
Hsu, Heng-Ming
Wong, Shyh-Chyi
Chang, Chun-Yen
Huang, Tiao-Yuan
Sun, Jack Yuan-Chen
description
doi_str_mv 10.1109/55.954918
format Article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_1018685119</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2679266411</sourcerecordid><originalsourceid>FETCH-proquest_journals_10186851193</originalsourceid><addsrcrecordid>eNqNjb0KwjAURoMoWH8G3-CCczWXJm06i6KDKOomUoqmmtIkNY36-nbwAZy-4RzOR8gE6QyRpnPOZylnKYoOCZBzEVIeR10S0IRhGCGN-2TQNCWlyFjCArLf6NrZtzJ38A8JhxXU0hXW6dxcJdgC2q6As1ZXZy8aFtvdET7KP-AmZQ0m_MiqAqXrKjc-98qaEekVedXI8W-HZLpanhbrsL15vmTjs9K-nGlRhhRFLDhiGv1nfQGK6UIi</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1018685119</pqid></control><display><type>article</type><title>Improving the RF performance of 0.18 [micro]m CMOS with deep n-well implantation</title><source>IEEE Electronic Library (IEL)</source><creator>Su, Jiong-Guang ; Hsu, Heng-Ming ; Wong, Shyh-Chyi ; Chang, Chun-Yen ; Huang, Tiao-Yuan ; Sun, Jack Yuan-Chen</creator><creatorcontrib>Su, Jiong-Guang ; Hsu, Heng-Ming ; Wong, Shyh-Chyi ; Chang, Chun-Yen ; Huang, Tiao-Yuan ; Sun, Jack Yuan-Chen</creatorcontrib><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/55.954918</identifier><language>eng</language><publisher>New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</publisher><ispartof>IEEE electron device letters, 2001-10, Vol.22 (10), p.481</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2001</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27911,27912</link.rule.ids></links><search><creatorcontrib>Su, Jiong-Guang</creatorcontrib><creatorcontrib>Hsu, Heng-Ming</creatorcontrib><creatorcontrib>Wong, Shyh-Chyi</creatorcontrib><creatorcontrib>Chang, Chun-Yen</creatorcontrib><creatorcontrib>Huang, Tiao-Yuan</creatorcontrib><creatorcontrib>Sun, Jack Yuan-Chen</creatorcontrib><title>Improving the RF performance of 0.18 [micro]m CMOS with deep n-well implantation</title><title>IEEE electron device letters</title><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2001</creationdate><recordtype>article</recordtype><recordid>eNqNjb0KwjAURoMoWH8G3-CCczWXJm06i6KDKOomUoqmmtIkNY36-nbwAZy-4RzOR8gE6QyRpnPOZylnKYoOCZBzEVIeR10S0IRhGCGN-2TQNCWlyFjCArLf6NrZtzJ38A8JhxXU0hXW6dxcJdgC2q6As1ZXZy8aFtvdET7KP-AmZQ0m_MiqAqXrKjc-98qaEekVedXI8W-HZLpanhbrsL15vmTjs9K-nGlRhhRFLDhiGv1nfQGK6UIi</recordid><startdate>20011001</startdate><enddate>20011001</enddate><creator>Su, Jiong-Guang</creator><creator>Hsu, Heng-Ming</creator><creator>Wong, Shyh-Chyi</creator><creator>Chang, Chun-Yen</creator><creator>Huang, Tiao-Yuan</creator><creator>Sun, Jack Yuan-Chen</creator><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20011001</creationdate><title>Improving the RF performance of 0.18 [micro]m CMOS with deep n-well implantation</title><author>Su, Jiong-Guang ; Hsu, Heng-Ming ; Wong, Shyh-Chyi ; Chang, Chun-Yen ; Huang, Tiao-Yuan ; Sun, Jack Yuan-Chen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_10186851193</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2001</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Su, Jiong-Guang</creatorcontrib><creatorcontrib>Hsu, Heng-Ming</creatorcontrib><creatorcontrib>Wong, Shyh-Chyi</creatorcontrib><creatorcontrib>Chang, Chun-Yen</creatorcontrib><creatorcontrib>Huang, Tiao-Yuan</creatorcontrib><creatorcontrib>Sun, Jack Yuan-Chen</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE electron device letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Su, Jiong-Guang</au><au>Hsu, Heng-Ming</au><au>Wong, Shyh-Chyi</au><au>Chang, Chun-Yen</au><au>Huang, Tiao-Yuan</au><au>Sun, Jack Yuan-Chen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Improving the RF performance of 0.18 [micro]m CMOS with deep n-well implantation</atitle><jtitle>IEEE electron device letters</jtitle><date>2001-10-01</date><risdate>2001</risdate><volume>22</volume><issue>10</issue><spage>481</spage><pages>481-</pages><issn>0741-3106</issn><eissn>1558-0563</eissn><cop>New York</cop><pub>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</pub><doi>10.1109/55.954918</doi></addata></record>
fulltext fulltext
identifier ISSN: 0741-3106
ispartof IEEE electron device letters, 2001-10, Vol.22 (10), p.481
issn 0741-3106
1558-0563
language eng
recordid cdi_proquest_journals_1018685119
source IEEE Electronic Library (IEL)
title Improving the RF performance of 0.18 [micro]m CMOS with deep n-well implantation
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-15T13%3A35%3A36IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Improving%20the%20RF%20performance%20of%200.18%20%5Bmicro%5Dm%20CMOS%20with%20deep%20n-well%20implantation&rft.jtitle=IEEE%20electron%20device%20letters&rft.au=Su,%20Jiong-Guang&rft.date=2001-10-01&rft.volume=22&rft.issue=10&rft.spage=481&rft.pages=481-&rft.issn=0741-3106&rft.eissn=1558-0563&rft_id=info:doi/10.1109/55.954918&rft_dat=%3Cproquest%3E2679266411%3C/proquest%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1018685119&rft_id=info:pmid/&rfr_iscdi=true