Simulation of Power Electronics
The parameters of the block IGBT are the inner resistance Ron, the inductance Lon, and the threshold voltage Vf. IGBT turns on when the voltage collector-emitter Uke > Vf and the control (gate) signal g > 0, and it turns off when Uke > 0 and g = 0 and is in turning-off state when Uke < 0...
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creator | Perelmuter, Viktor |
description | The parameters of the block IGBT are the inner resistance Ron, the inductance
Lon, and the threshold voltage Vf. IGBT turns on when the voltage collector-emitter
Uke > Vf and the control (gate) signal g > 0, and it turns off when Uke > 0 and g = 0 and
is in turning-off state when Uke < 0. An antiparallel diode has to be used in order to
make a path for the current in the last case, how it is made in the block IGBT/Diode.
The block models the process turning-off: current decreasing from Imax to 0.1 Imax for
the fall time Tf and further to zero for tail time Tt. |
doi_str_mv | 10.1201/9781315316246-10 |
format | Book Chapter |
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Lon, and the threshold voltage Vf. IGBT turns on when the voltage collector-emitter
Uke > Vf and the control (gate) signal g > 0, and it turns off when Uke > 0 and g = 0 and
is in turning-off state when Uke < 0. An antiparallel diode has to be used in order to
make a path for the current in the last case, how it is made in the block IGBT/Diode.
The block models the process turning-off: current decreasing from Imax to 0.1 Imax for
the fall time Tf and further to zero for tail time Tt.</description><identifier>ISBN: 149876598X</identifier><identifier>ISBN: 9781498765985</identifier><identifier>EISBN: 9781315316246</identifier><identifier>EISBN: 1315316242</identifier><identifier>EISBN: 9781315316239</identifier><identifier>EISBN: 1315316234</identifier><identifier>DOI: 10.1201/9781315316246-10</identifier><identifier>OCLC: 965773001</identifier><identifier>LCCallNum: TK1005.P45535 2017</identifier><language>eng</language><publisher>United Kingdom: CRC Press</publisher><subject>Electronics engineering ; Power generation & distribution</subject><ispartof>Renewable Energy Systems, 2017, p.65-148</ispartof><rights>2017 by Taylor & Francis Group, LLC</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://ebookcentral.proquest.com/covers/4755932-l.jpg</thumbnail><link.rule.ids>775,776,780,789,4028,27904</link.rule.ids></links><search><creatorcontrib>Perelmuter, Viktor</creatorcontrib><title>Simulation of Power Electronics</title><title>Renewable Energy Systems</title><description>The parameters of the block IGBT are the inner resistance Ron, the inductance
Lon, and the threshold voltage Vf. IGBT turns on when the voltage collector-emitter
Uke > Vf and the control (gate) signal g > 0, and it turns off when Uke > 0 and g = 0 and
is in turning-off state when Uke < 0. An antiparallel diode has to be used in order to
make a path for the current in the last case, how it is made in the block IGBT/Diode.
The block models the process turning-off: current decreasing from Imax to 0.1 Imax for
the fall time Tf and further to zero for tail time Tt.</description><subject>Electronics engineering</subject><subject>Power generation & distribution</subject><isbn>149876598X</isbn><isbn>9781498765985</isbn><isbn>9781315316246</isbn><isbn>1315316242</isbn><isbn>9781315316239</isbn><isbn>1315316234</isbn><fulltext>true</fulltext><rsrctype>book_chapter</rsrctype><creationdate>2017</creationdate><recordtype>book_chapter</recordtype><recordid>eNpVkE1LAzEQhiOiWGvv3tw_sJrPSXKUUluhoKCCt5DNJri63dRka_Hfu0u99DTDA-_DzIvQNcG3hGJyp6UijAhGgHIoCT5BsyN0ii4J10qC0Or9HE00CCkZxuQCzXL-xMMmuZRKT9DNS7PZtbZvYlfEUDzHvU_FovWuT7FrXL5CZ8G22c_-5xS9PSxe56ty_bR8nN-vy4ZgNd6gwTvAARQDq5zmWGtgXlay9jjw2nMua-EqZRXmUMsBC65tUFaAqCibInrwblP83vncG1_F-OV81yfbug-77X3KhkshNKOGCgMwhFaHUNOFmDZ2H1Nbm97-tjGFZDvX5FGSDcFmLM4ctTTSn0E6vE7ZH8moYKw</recordid><startdate>2017</startdate><enddate>2017</enddate><creator>Perelmuter, Viktor</creator><general>CRC Press</general><general>Taylor & Francis Group</general><scope>FFUUA</scope></search><sort><creationdate>2017</creationdate><title>Simulation of Power Electronics</title><author>Perelmuter, Viktor</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i1086-1096ec60f6836a8c9409963e7b7de0f4de447d5cb8a8046d77de549af8a565b23</frbrgroupid><rsrctype>book_chapters</rsrctype><prefilter>book_chapters</prefilter><language>eng</language><creationdate>2017</creationdate><topic>Electronics engineering</topic><topic>Power generation & distribution</topic><toplevel>online_resources</toplevel><creatorcontrib>Perelmuter, Viktor</creatorcontrib><collection>ProQuest Ebook Central - Book Chapters - Demo use only</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Perelmuter, Viktor</au><format>book</format><genre>bookitem</genre><ristype>CHAP</ristype><atitle>Simulation of Power Electronics</atitle><btitle>Renewable Energy Systems</btitle><date>2017</date><risdate>2017</risdate><spage>65</spage><epage>148</epage><pages>65-148</pages><isbn>149876598X</isbn><isbn>9781498765985</isbn><eisbn>9781315316246</eisbn><eisbn>1315316242</eisbn><eisbn>9781315316239</eisbn><eisbn>1315316234</eisbn><abstract>The parameters of the block IGBT are the inner resistance Ron, the inductance
Lon, and the threshold voltage Vf. IGBT turns on when the voltage collector-emitter
Uke > Vf and the control (gate) signal g > 0, and it turns off when Uke > 0 and g = 0 and
is in turning-off state when Uke < 0. An antiparallel diode has to be used in order to
make a path for the current in the last case, how it is made in the block IGBT/Diode.
The block models the process turning-off: current decreasing from Imax to 0.1 Imax for
the fall time Tf and further to zero for tail time Tt.</abstract><cop>United Kingdom</cop><pub>CRC Press</pub><doi>10.1201/9781315316246-10</doi><oclcid>965773001</oclcid><tpages>84</tpages></addata></record> |
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source | Taylor & Francis eBooks A-Z |
subjects | Electronics engineering Power generation & distribution |
title | Simulation of Power Electronics |
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